Two-dimensional (2D) materials with graphene as a representative have been intensively studied for a long time. Recently, monolayer gallium nitride (ML GaN) with honeycomb structure was successfully fabricated in experiments, generating enormous research interest for its promising applications in nano- and opto-electronics. Considering all these applications are inevitably involved with thermal transport, systematic investigation of the phonon transport properties of 2D GaN is in demand. In this paper, by solving the Boltzmann transport equation (BTE) based on first-principles calculations, we performed a comprehensive study of the phonon transport properties of ML GaN, with detailed comparison to bulk GaN, 2D graphene, silicene and ML BN with similar honeycomb structure. Considering the similar planar structure of ML GaN to graphene, it is quite intriguing to find that the thermal conductivity (κ) of ML GaN (14.93 W mK) is more than two orders of magnitude lower than that of graphene and is even lower than that of silicene with a buckled structure. Systematic analysis is performed based on the study of the contribution from phonon branches, comparison among the mode level phonon group velocity and lifetime, the detailed process and channels of phonon-phonon scattering, and phonon anharmonicity with potential energy well. We found that, different from graphene and ML BN, the phonon-phonon scattering selection rule in 2D GaN is slightly broken by the lowered symmetry due to the large difference in the atomic radius and mass between Ga and N atoms. Further deep insight is gained from the electronic structure. Resulting from the special sp orbital hybridization mediated by the Ga-d orbital in ML GaN, the strongly polarized Ga-N bond, localized charge density, and its inhomogeneous distribution induce large phonon anharmonicity and lead to the intrinsic low κ of ML GaN. The orbitally driven low κ of ML GaN unraveled in this work would make 2D GaN prospective for applications in energy conversion such as thermoelectrics. Our study offers fundamental understanding of phonon transport in ML GaN within the framework of BTE and further electronic structure, which will enrich the studies of nanoscale phonon transport in 2D materials and shed light on further studies.

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After hydrogenation or fluorination, the band gap of the ZnO monolayer can be effectively modulated, and a nonmagnetic metal or magnetic half-metal → non-magnetic semiconductor transition can be achieved.

Potassium partitioning between molten silicates and liquid iron alloys is the fundamental process determining its incorporation into the Earth's core. In this study, it is investigated using the method of the ab initio molecular dynamics simulation combined with the thermodynamic integration technique. Results suggest that the potassium incorporation into iron alloys positively depends on temperature, while the effect of pressure is insignificant. Moreover, the existence of oxygen in liquid iron alloys significantly enhances the potassium solubility therein, whereas sulfur and silicon only have negligible effects. Electronic structure analyses reveal that potassium remains alkali‐metallic in liquid iron alloy systems under all conditions in this study, which is distinct from the characteristics reported for solid potassium. Atomic structure analyses indicate that the oxygen coordination number around potassium atom increases with oxygen concentration in liquid iron alloys, supporting the oxygen concentration dependence of the potassium partitioning between molten silicates and liquid iron alloys. Using the obtained partitioning coefficients combined with geochemical property, the maximum potassium concentration in the Earth's core is estimated to be ~30 ppm, which would be unlikely to affect the thermal evolution of the Earth's core significantly.

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