Recent advanced applications of AAS and ICP-MS in the semiconductor industry

Shabani, Mohammad Bagher; Shiina, Yusuke; Kirscht, F.G.; Shimanuki, Y.

doi:10.1016/s0921-5107(02)00739-0

Cited by 37 publications

(35 citation statements)

References 7 publications

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“…Table 5 lists all QC test results for aluminum and the spike recovery test results for sodium and aluminum. The QC test results reveal that aluminum QC recovery was over 94% after adding the HNO 3 . The spike recovery test shows that sodium and aluminum spike recovery can be improved up to over 85% after adding HNO 3 .…”

Section: Elimination Of Si-matrix Interference For Gf-aas Analysismentioning

confidence: 99%

“…Besides this method, it can also be thermally decomposed into HF and NH 4 F in a heating reversible reaction. Furthermore, the ammonium fluoride could also be treated thermally to decompose into HF and NH 3 . Therefore, if the nitride film VPD samples were heated at a suitable temperature and the reaction gas could be removed by using an exhaust, then NH 4 HF 2 could be eliminated from the VPD samples at a lower temperature based on equilibrium condition.…”

Section: Elimination Of Si-matrix Interference In Icp-ms Analysismentioning

confidence: 99%

“…The spike recovery test shows that sodium and aluminum spike recovery can be improved up to over 85% after adding HNO 3 . However, adding HNO 3 will reduce the absorption of aluminum, such that the addition amount of modifier and HNO 3 Unit: % …”

Section: Elimination Of Si-matrix Interference For Gf-aas Analysismentioning

confidence: 99%

“…Krushevska et al studied the pretreatment of thick oxide and nitride film VPD samples, and found that adding HF and HNO 3 to the VPD samples can remove the excess Si in the evaporation process. [9] Most of the Si-matrix can be removed during such pretreatment procedure.…”

Section: Introductionmentioning

confidence: 99%

“…However, the extra chemicals introduce contaminants to the VPD samples. And the VPD samples with various thicknesses must be tested to find the proper volumes of HNO 3 and HF needed to be added in. For reducing the extra contamination, Vereecke et al described a heating step to remove the Si-matrix after wafer fuming in the VPD process.…”

Section: Introductionmentioning

confidence: 99%

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Quantification issues of trace metals analysis on silicon oxide and nitride films by using VPD‐ICP‐MS and VPD‐GF‐AAS

Yeh

Hsien

Huang

et al. 2008

Surface & Interface Analysis

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Vapor phase decomposition (VPD) is a pretreatment technique for collecting trace metal contaminants on the surface of a Si wafer. Such trace metals can be identified and quantified by inductively coupled plasma mass spectrometry (ICP-MS) or graphite furnace atomic absorption spectroscopy (GF-AAS). However, the analytical results can be influenced by the Si-matrix in the VPD samples. This article discusses the approaches to eliminate the interference caused by Si-matrix. When the thickness of oxide film on wafer surface is less than 100 Å, the quantification results of ICP-MS analysis will not be affected by Si-matrix in the VPD samples. Except this, the Si-matrix must be removed before analysis. An improved heating pretreatment approach has been adopted successfully to eliminate the Si-matrix. For GF-AAS analysis, the Si-matrix will influence the sodium and aluminum analyses. Adding HNO 3 to the graphite furnace tubing after sample injection could also eliminate the interference caused by the Si-matrix. The method detection limits (MDLs) of VPD-GF-AAS and VPD-ICP-MS range from 0.04 to 0.55 × 10 10 atoms cm −2 and 0.05 to 1.73 × 10 9 atoms cm −2 , respectively.

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Section: Elimination Of Si-matrix Interference For Gf-aas Analysismentioning

confidence: 99%

Section: Elimination Of Si-matrix Interference In Icp-ms Analysismentioning

confidence: 99%

Section: Elimination Of Si-matrix Interference For Gf-aas Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Quantification issues of trace metals analysis on silicon oxide and nitride films by using VPD‐ICP‐MS and VPD‐GF‐AAS

Yeh

Hsien

Huang

et al. 2008

Surface & Interface Analysis

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Mass Spectrometry in Semiconductor Research

Flege

Ensinger

2012

Mass Spectrometry Handbook

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Current literature in mass spectrometry

2004

J. Mass Spectrom.

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In order to keep subscribers up‐to‐date with the latest developments in their field, John Wiley & Sons are providing a current awareness service in each issue of the journal. The bibliography contains newly published material in the field of mass spectrometry. Each bibliography is divided into 11 sections: 1 Books, Reviews & Symposia; 2 Instrumental Techniques & Methods; 3 Gas Phase Ion Chemistry; 4 Biology/Biochemistry: Amino Acids, Peptides & Proteins; Carbohydrates; Lipids; Nucleic Acids; 5 Pharmacology/Toxicology; 6 Natural Products; 7 Analysis of Organic Compounds; 8 Analysis of Inorganics/Organometallics; 9 Surface Analysis; 10 Environmental Analysis; 11 Elemental Analysis. Within each section, articles are listed in alphabetical order with respect to author (4 Weeks journals ‐ Search completed at 17th. Mar. 2004)

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Recent advanced applications of AAS and ICP-MS in the semiconductor industry

Cited by 37 publications

References 7 publications

Quantification issues of trace metals analysis on silicon oxide and nitride films by using VPD‐ICP‐MS and VPD‐GF‐AAS

Quantification issues of trace metals analysis on silicon oxide and nitride films by using VPD‐ICP‐MS and VPD‐GF‐AAS

Mass Spectrometry in Semiconductor Research

Current literature in mass spectrometry

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