Mass Spectrometry in Semiconductor Research

Flege, Stefan; Ensinger, Wolfgang

doi:10.1002/9781118180730.ch40

Cited by 1 publication

(2 citation statements)

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“…[39]), a corresponding increase of the beam energy enables measuring a hydro gen depth profile. More common than NRRA are secondary ion mass spectrometry (SIMS) measurements, because this technique allows a simultaneous detection of further elements included in a sample [43,44] SIMS mea surements were performed with a sector field instrument (Cameca ims5f) using optimized conditions for the detection of boron in silicon. According to Refs.…”

Section: Hydrogen Depth Profiling and Bonding Structuresmentioning

confidence: 99%

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Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

Gerke

Becker²,

Rogalla³

et al. 2016

Thin Solid Films

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a b s t r a c t a r t i c l e i n f oAmorphous silicon (a Si) is common in the production of technical devices and can be deposited by several techniques. In this study intrinsic and doped, hydrogen less amorphous silicon films are RF magnetron sputter deposited and post hydrogenated in a remote hydrogen plasma reactor at a temperature of 370°C. Secondary ion mass spectrometry of a boron doped (p) a Si layer shows that the concentration of dopants in the sputtered layer becomes the same as present in the sputter target. Improved surface passivation of phosphorous doped 5 Ω cm, FZ, (n) c Si can be achieved by post hydrogenation yielding a minority carrier lifetime of~360 μs finding an optimum for~40 nm thin films, deposited at 325°C. This relatively low minority carrier lifetime indicates high disorder of the hydrogen less sputter deposited amorphous network. Post hydrogenation leads to a decrease of the number of localized states within the band gap. Optical band gaps (Taucs gab as well as E 04 ) can be determined to~1.88 eV after post hydrogenation. High resolution transmission electron microscopy and optical Raman investigations show that the sputtered layers are amorphous and stay like this during post hydrogenation. As a consequence of the missing hydrogen during deposition, sputtered a Si forms a rough surface compared to CVD a Si. Atomic force microscopy points out that the roughness decreases by up to 25% during post hydrogenation. Nuclear resonant reaction analysis permits the investigation of hydrogen depth profiles and allows determining the diffusion coefficients of several post hydrogenated samples from of a model developed within this work. A dependency of diffusion coefficients on the duration of post hydrogenation indicates trapping diffusion as the main diffusion mechanism. Additional Fourier transform infrared spectroscopy measurements show that hardly any interstitial hydrogen exists in the post hydrogenated a Si layers. The results of this study open the way for further hydrogen diffusion experiments which require an initially unhydrogenated drain layer.

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Section: Hydrogen Depth Profiling and Bonding Structuresmentioning

confidence: 99%

“…According to Refs. [43,44] determined by comparing with a known standard. Another method getting information about the overall hydrogen concentration without detailed information about the depth distribu tion is Fourier transform infrared spectroscopy (FTIR).…”

Section: Hydrogen Depth Profiling and Bonding Structuresmentioning

confidence: 99%