Internal gettering (IG) behavior for Fe, Ni and Cu in Czochralski (CZ) silicon wafers has been studied. Oxygen precipitates for IG were formed in wafers using three different thermal simulation processes (Low, Medium and High). Dependence of the oxide precipitate density as a function of oxygen concentration at different thermal simulation processes was evaluated from etch pits created by Secco etching. It was found that the oxide precipitate density is strongly dependent on the oxygen concentration, rather than the thermal simulation processes applied. Almost 100% of gettering efficiency (GE) was measured for Fe, Ni and Cu in the wafers with high oxide precipitate densities. Poor gettering efficiency was realized for Fe, Ni and Cu in the wafers with low oxygen concentration at all three thermal simulation processes. The result of this study suggested a strong correlation between gettering efficiency and oxide precipitate density. It is found that the critical oxygen precipitation density necessary for effective gettering is more than 1E9/cm 3 . The gettering efficiency in epitaxial wafers with different boron concentration in substrate wafers was studied. Very high gettering efficiency in the wafers with higher boron concentration was confirmed.
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