REBL: design progress toward 16 nm half-pitch maskless projection electron beam lithography

McCord, Mark A.; Petric, Paul; Ummethala, Upendra; Carroll, Allen; Kojima, Shinichi; Grella, L.; Shriyan, Sameet K.; Rettner, Charles; Bevis, Chris

doi:10.1117/12.919744

Cited by 38 publications

(24 citation statements)

References 8 publications

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“…For this reason there has been put significant effort into the improvement of the performance of EBL tools in recent years which has led to the development of multi-beam and hybrid technologies. [2][3][4][5] Besides the technical advancements of EBL systems the resist materials used are vital for high quality and high throughput EBL. For an ideal EBL resist material it is desirable to have high sensitivity, high contrast, high resolution, and high plasma etching resistance for pattern transfer to the substrate.…”

Section: Introductionmentioning

confidence: 99%

Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography

Pfirrmann

Voigt

Kolander

et al. 2016

Microelectronic Engineering

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Section: Introductionmentioning

confidence: 99%

Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography

Pfirrmann

Voigt

Kolander

et al. 2016

Microelectronic Engineering

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“…7 However, as resolution requirements have increased there has been increasing focus on EBL for volume production, with the development of a number of multi-beam and hybrid technologies. [8][9][10][11] Due to the low-throughput, even for multibeam EBL, the sensitivity of e-beam resists is considered a very important factor. For high voltage e-beam exposure, a 50-60 mC cm À2 resist sensitivity requirement has been set out by ITRS, whilst low voltage systems, such as MAPPER, 11 require sensitivities of 30-60 mC cm À2 .…”

Section: Introductionmentioning

confidence: 99%

Chemically amplified phenolic fullerene electron beam resist

et al. 2014

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Molecular resist materials for electron beam lithography have received significant interest as a route to reducing line width roughness and improving resolution. However, they have often required the use of hazardous solvents in their processing. A new family of fullerene based negative tone chemically amplified e-beam resists, using industry compatible solvents, has been developed. A sensitivity of $40 mC cm À2 was achieved at 20 keV. Isolated features with a line width of 13.6 nm as well as $20 nm lines on a 36 nm pitch have been patterned, whilst one variant has demonstrated resolution to 15 nm halfpitch at slightly higher dose.

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“…as caused by lens heating. The method is applicable to multiple-patterning lithography with DUV, EUV and even electron beam projection exposures 10 , provided similar pupil illumination is used in consecutive steps and a suitable fluorophore is available.…”

Section: Introductionmentioning

confidence: 99%

Real-time focus and overlay measurement by the use of fluorescent markers

Maas

Zwet

2014

Metrology, Inspection, and Process Control for Microlithography XXVIII

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In lithography, overlay control is getting increasingly complex. Advanced Process Control (APC) is introduced to minimize excursions from the process window for the present exposure. APC uses metrology data of previously exposed wafers, hence, there is always a delay of tens of minutes before the required information is available. This paper proposes the combination of a patterned expose beam and a patterned fluorescent marker on a wafer to generate a fluorescent signal that carries real-time information of the focus and/or position error of the expose pattern with the pattern on the wafer. A practical realization requires some changes to the exposure process, stepper design and reticle lay-out. Firstly, a matched pair of markers on the wafer and reticle is required. Secondly, the generated fluorescent signal must be measured, for example with a (spectrally filtered) photon counter close to the expose area of the wafer. At last, the markers from the previous lithography step shall, after development, be filled with fluorescent material. This deposition requires an additional process step. Photon budget calculations suggest an overlay measurement accuracy of less than a tenth of a nm (real-time).

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REBL: design progress toward 16 nm half-pitch maskless projection electron beam lithography

Cited by 38 publications

References 8 publications

Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography

Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography

Chemically amplified phenolic fullerene electron beam resist

Real-time focus and overlay measurement by the use of fluorescent markers

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