Chemically amplified phenolic fullerene electron beam resist

Abstract

Molecular resist materials for electron beam lithography have received significant interest as a route to reducing line width roughness and improving resolution. However, they have often required the use of hazardous solvents in their processing. A new family of fullerene based negative tone chemically amplified e-beam resists, using industry compatible solvents, has been developed. A sensitivity of $40 mC cm À2 was achieved at 20 keV. Isolated features with a line width of 13.6 nm as well as $20 nm lines on a 36 nm pitch have been patterned, whilst one variant has demonstrated resolution to 15 nm halfpitch at slightly higher dose.

Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography

“…[18] Additionally, chemically amplified resists and EUV resists are commonly used for high resolution EBL. [19,20] Against this background, the development of a novel positive tone resist material for electron-beam lithography as an alternative to the ZEP520A seems to be still required.…”

Scanning Probe Lithography: State-of-the-Art and Future Perspectives

“…A comparison of these nanofabrication techniques is shown in Table 1. [11], and 58 nm/min [12] against different resists Slow 0.05 µm 3 /s in FIB deposition [13] Fast 15 wafers/h per imprint station [14] See Table 2 The biggest advantage of EBL and FIB is that they can pattern nanostructures with feature size in sub-5 nm and can process a wide range of materials, such as metals [8], alloys [15], hard and brittle ceramics and semiconductors [13], and polymers [16], making them extremely suitable techniques to process nanostructures with high precision [17]. However, the processing environment is harsh and requires vacuum operation.…”

“…The processing speed of EBL is dependent on the type of electron beam resist. For example, the patterning speed of EBL can achieve 17 nm/min [10], 40 nm/min [11], and 58 nm/min [12] against SML resist, poly (GMA-co-MMA-co-TPSMA) resist, and IM-MFP 12-8 resist, respectively. Furthermore, FIB can be destructive and modify the electrical properties of the substrate surface via undesirable deposition of gallium ions.…”

Solid State Physicochemical Properties and Applications of Organic and Metallo- Organic Fullerene Derivatives

“…However, halogenated solvents are required for the spincasting and development of these resists, and such solvents are not acceptable (safe) for commercial use. This problem was recently solved by using phenol-based fullerene derivatives [222], which are compatible with industryapproved casting solvents and developers.…”