Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography

Pfirrmann, Stefan; Voigt, Anja; Kolander, Anett; Grützner, Gabi; Lohse, Olga; Harder, Irina; Guzenko, Vitaliy A.

doi:10.1016/j.mee.2016.02.028

Cited by 10 publications

(11 citation statements)

References 24 publications

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“…3a)-b). This can be attributed to a higher molecular resist weight after exposure, which has been reported to translate into a higher reflow temperatures for resists based on molecular chain scission [47][48][49]. Indeed, an increase of the reflow temperature significantly improves sidewalls profile, as shown in Fig.…”

Section: Reflow Of Electroresistmentioning

confidence: 82%

Ar/Cl₂ etching of GaAs optomechanical microdisks fabricated with positive electroresist

Benevides¹,

Ménard²,

Wiederhecker³

et al. 2019

Opt. Mater. Express

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A method to fabricate GaAs microcavities using only a soft mask with an electrolithographic pattern in an inductively coupled plasma etching is presented. A careful characterization of the fabrication process pinpointing the main routes for a smooth device sidewall is discussed. Using the final recipe, optomechanical microdisk resonators are fabricated. The results show a very high optical quality factors of Q opt > 2 × 10 5 , among the largest already reported for dry-etching devices. The final devices are also shown to present high mechanical quality factors and an optomechanical vacuum coupling constant of g 0 = 2π × 13.6 kHz enabling self-sustainable mechanical oscillations for an optical input power above 1 mW. OCIS codes: (130.3990) Micro-optical devices; (230.4000) Microstructure fabrication; (220.4880) Optomechanics 1. Introduction Harnessing the confinement of light with wavelength-scale waveguides and cavities has enabled the realization of table-top scale nonlinear optical phenomena in silicon-compatible photonic chips. Recent examples show the versatility of this integrated photonics approach, such as frequency comb generation [1, 2], quantum computation [3-8], low voltage eletro-optical modulation [9], and optical to microwave coherent conversion [10]. One key ingredient that may also boost this revolution is the interaction between light and mechanical degrees of freedom, enabling both read-out and actuation of mesoscale mechanical modes in waveguides [11] and cavities [12][13][14][15], paving the road towards the sound circuits revolution [16,17]. Throughout the quest for better suited cavity geometries that can host optical and mechanical waves, microdisk cavities have proven to be a simple and effective choice. Their tight radial confinement of whispering gallery optical waves and rather strong interaction with radial breathing mechanical modes lead to high optomechanical coupling rates [18][19][20], which are necessary for efficient device-level functionalities [7,[21][22][23]. Other ingredients in the optomechanical enhancement are the cavity or waveguide material properties. Although silicon is widespread in many optomechanical devices [14,[24][25][26][27] due to its mature fabrication, the interest in III-V materials for optomechanical devices has increased [28-32] due to their unique optical, electronic and mechanical properties. Gallium Arsenide (GaAs), for instance, is advantageous because of its very high photoelastic coefficient [33], which leads to large electrostrictive forces and optomechanical coupling [18,34]. Moreover, optically active layers can be easily grown on GaAs wafers, allowing the fabrication of light-emitting optomechanical devices [35][36][37].Despite the tougher challenges in fabricating high optical quality factor in GaAs cavities, in comparison to the more mature fabrication of silicon, both wet and dry chemistry etching have been successfully developed. Wet etching, followed by surface passivation, resulted in record high intrinsic optical quality factors of 6 × 10 ...

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Section: Reflow Of Electroresistmentioning

confidence: 82%

Ar/Cl₂ etching of GaAs optomechanical microdisks fabricated with positive electroresist

Benevides¹,

Ménard²,

Wiederhecker³

et al. 2019

Opt. Mater. Express

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“…The first one is the resolving of Siemens star, a commonly used way to characterize the resolution of optical devices. [ 48 ] The resultant SEM images were provided in Figure 1c–f, wherein 40 uniform sectors were well resolved with a solid circle in the center due to the dense exposure. The zoomed‐in images (Figure S19, Supporting Information) provided a detailed information of the circles with average radii about 300 and 500 nm for PLC 44 and PLDC 47 , respectively.…”

Section: Resultsmentioning

confidence: 99%

CO₂‐Based Dual‐Tone Resists for Electron Beam Lithography

Luo

Wang

et al. 2020

Adv Funct Materials

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The increasing global environmental and energy crisis has urgently motivated the advancement of sustainable materials. Significant effort has been focused on developing new materials to replace the fossil‐based resists in the semiconductor industry based on greener sources such as ice, dry ice, small organic molecules, and proteins. Such resist materials, however, have yet to meet the stringent requirements of high sensitivity, high resolution, reliable repeatability, and good compatibility with the current protocols. To this end, CO2‐based polycarbonates (CO2‐PCs) obtained from the copolymerization of CO2 and epoxides are demonstrated as sustainable dual‐tone (positive & negative tone) resists for electron beam lithography. By adjusting the chemical structure, developing agent, and molecular weight, the CO2‐PCs present high sensitivities to electron beam (1.3/120 µC cm−2), narrow critical dimensions (29/58 nm), and moderate line edge roughness (4.6/26.7 nm) for negative and positive resists, respectively. A deep understanding of the exposure mechanism of CO2‐PC resists is provided on the basis of the Fourier transform infrared, Raman, and electron ionization mass spectroscopy. 2D photonic crystal devices are fabricated using the negative and positive CO2‐PC resists, respectively, and both devices show distinct colors derived from their well‐defined nanostructures, indicating the great practical potential of CO2‐derived electron beam resists.

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“…4 The latter, developed by micro resist technology GmbH, consists of an organic copolymer of an acrylic, chlorinecontaining monomer with an acrylic monomer bearing aromatic side-group (total molecular weight 134 200 g/mol). 14 An additional resist material was also used as reference for the comparison of the lithographic sensitivity. To this purpose, PMMA of molecular weight 950 000 g/mol and concentration 1% w/w, cast in ethyl lactate, was used.…”

Section: Methodsmentioning

confidence: 99%

“…A great variety of processing conditions have been explored by EBL and reported for PMMA and ZEP520A, 5,13,31 and for mr-PosEBR. 14 The performance of PMMA is well known at EUV too. 32,33 In the scope of this work, we focus on the comparison of dense l/s array patterning by EBL and EUV-IL under the same processing conditions.…”

Section: B Patterning Performancementioning

confidence: 99%

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Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography

Fallica

Kazazis

Kirchner

et al. 2017

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of nanoscale devices and structures. For this technique to be effective, the resist material plays a key role and must have high resolution, reasonable sensitivity and high etch selectivity against the conventional silicon substrate or underlayer film.In this work, the lithographic performance of two high etch resistance materials was evaluated: ZEP520A (Nippon Zeon Co.) and mr-PosEBR (micro resist technology GmbH). Both materials are positive tone, polymer-based and non-chemically amplified resists. Two exposure techniques were used: electron beam lithography (EBL) and extreme ultraviolet (EUV) lithography. These resists were originally designed for EBL patterning, where high quality patterning at sub-100 nm resolution was previously demonstrated. In the scope of this work, we also aim to validate their extendibility to EUV for high resolution and large area patterning. To this purpose, the same EBL process conditions were employed at EUV. The figures of merit, i.e.

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Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography

Cited by 10 publications

References 24 publications

Ar/Cl₂ etching of GaAs optomechanical microdisks fabricated with positive electroresist

Ar/Cl₂ etching of GaAs optomechanical microdisks fabricated with positive electroresist

CO₂‐Based Dual‐Tone Resists for Electron Beam Lithography

Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography

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Towards a novel positive tone resist mr-PosEBR for high resolution electron-beam lithography

Cited by 10 publications

References 24 publications

Ar/Cl2 etching of GaAs optomechanical microdisks fabricated with positive electroresist

Ar/Cl2 etching of GaAs optomechanical microdisks fabricated with positive electroresist

CO2‐Based Dual‐Tone Resists for Electron Beam Lithography

Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography

Contact Info

Product

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Ar/Cl₂ etching of GaAs optomechanical microdisks fabricated with positive electroresist

Ar/Cl₂ etching of GaAs optomechanical microdisks fabricated with positive electroresist

CO₂‐Based Dual‐Tone Resists for Electron Beam Lithography