Realizing an Omega-Shaped Gate MoS2 Field-Effect Transistor Based on a SiO2/MoS2 Core–Shell Heterostructure

Dong-hui, Zhao; Tian, Zi-Liang; Líu, Hao; Gu, Zhenghao; Zhu, Hao; Chen, Lin; Sun, Qizhen; Zhang, David Wei

doi:10.1021/acsami.9b21727

Cited by 26 publications

(21 citation statements)

References 39 publications

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“…2020 [196] MoCl 5 + S(SiMe 3 ) 2 375 (800, S) (t)Au/Cr/Al 2 O 3 */MoS 2 */GaN 8 ML 3.5 (2-4) n 10 2 2019 [197] 300 (900, S) (t)Au/Cr/Al 2 O 3 */MoS 2 */sapphire 5 ML ≈3 (2.3-3.2) n ≈10 3 2019 [198] 350 (900, S) (t)Au/Cr/Al 2 O 3 */MoS 2 */sapphire 4 ML 0.56 d) 6.4 (≈3-10) e) n n >10 6 10 3 2020 [202] 400 (900, S) 2020 [199] 375 (800, inert) (+ 400, CS 2 ) 2017 [118] Mo 2017 [281] 155 (400, Ar + 500, S + 900, S) 2017 [241] 150 ( 2019 [242] 150 ( 2020 [70] Sn(dmamp) 2 + H 2 S plasma 150…”

Section: Field-effect Transistorsmentioning

confidence: 99%

“…Using the same ALD process, Zhao et al. [ 199 ] deposited 5 nm thick MoS 2 films on SiO 2 of both planar and nanowire morphology. Top‐gate transistors constructed on both substrates had comparable yet modest performance (mobility 0.01–0.02 cm 2 V −1 s −1 and I on / I off ratio of ≈4 × 10 2 ), which is much lower compared to the aforementioned FETs on sapphire and GaN.…”

Section: Applications Of Atomic Layer Deposited 2d Metal Dichalcogenidesmentioning

confidence: 99%

See 1 more Smart Citation

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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it was soon replaced by other materials. Research on the fundamental properties and preparation of TMDC monolayers in solution (1986), [8] on single-crystal substrates in ultrahigh vacuum (2001), [9] and in an accessible way using mechanical exfoliation [10] (2005) followed. It was the discovery of graphene in 2004 [11] with its ever expanding list of unique and exciting properties, phenomena, and potential applications [12] that amassed broad attention to 2D materials and resulted in the 2010 Nobel Prize in Physics awarded to Andre Geim and Konstantin Novoselov. Tremendous efforts have been put toward synthesis and applications of graphene, including the billion euro Graphene Flagship project funded by the European Union. [13,14] Graphene is a semimetal, however, and the need to have semiconducting materials for many crucial applications, in particular in electronics, has led researchers to search for other 2D materials. The scientific community turned to TMDCs following breakthroughs in observation of unique thickness-dependent properties, [15,16] monolayer synthesis using chemical vapor deposition (CVD), [17,18] and demonstration of high-performance semiconductor devices [19-21] in 2010-2013 (Figure 1). Indeed, in 2013 the number of scientific publications on TMDCs, in particular MoS 2 , nearly tripled over 2012, and the strong growth has continued to date, fueled by advances in synthesis, new devices, and exciting physical phenomena. The explosive growth in MoS 2 research has also expanded to other TMDCs, [22] resulting in yet new phenomena and potential applications being found. [23-26] It is now clear that TMDCs are remarkable in many ways. Their layered crystal structure gives rise to fundamental physics not seen in 3D materials, which enables novel devices and applications. [25,26,32,34-36] The layered structure also gives TMDCs their highly anisotropic properties, extremely high specific surface areas, possibility to intercalate different species between the layers, and stability as ultrathin sheets down to three atomic layers thick. The TMDC family contains dozens of different materials from semiconductors to semimetals, metals, and even superconductors. [5,22,25,34] However, TMDC research is still mostly in the early discovery stages and the investigations of TMDCs largely continue using flakes produced by mechanical exfoliation of bulk crystals. [10,26] Unfortunately, this method cannot be scaled up for practical 2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically...

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Section: Field-effect Transistorsmentioning

confidence: 99%

Section: Applications Of Atomic Layer Deposited 2d Metal Dichalcogenidesmentioning

confidence: 99%

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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“…This result is compared with our previously published results in Figure S6 (Supporting Information). Based on the same ALD-MoS 2 process, our previous study mainly investigated the application of new structures of transistors and logic circuits that were based on MoS 2 films and focused only on sapphire and SiO 2 substrates. , However, the influence of the growth substrate on MoS 2 films during the ALD growth process has not been systematically explored. Therefore, we compared MoS 2 films that were grown on various substrates and found that a smoother substrate that matches the crystal lattice of the grown film is more conducive to the growth of MoS 2 with high mobility.…”

Section: Resultsmentioning

confidence: 99%

MoS₂-on-AlN Enables High-Performance MoS₂ Field-Effect Transistors through Strain Engineering

Zhang

Luo

et al. 2020

ACS Appl. Mater. Interfaces

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Molybdenum disulfide (MoS 2 ) has substantial application prospects in the field of electronic devices. The fabrication of devices of excellent quality based on MoS 2 films is an important research direction. In this study, based on the atomic layer deposition technique, large-area MoS 2 films were grown, and top-gate MoS 2 -based field-effect transistor arrays were fabricated on four substrates (AlN, GaN, sapphire, and SiO 2 ). It was found that the interface defects that were introduced by lattice mismatch and roughness of the growth substrate could cause an exponential (10 2 ) drop in mobility. Because of the small lattice mismatch and excellent surface quality, transistors on the AlN substrate have shown an enhanced mobility (10.45 cm 2 V −1 s −1 ) compared to transistors on the other substrates. This study proves that the AlN substrate is a superior substrate for large-area and high-performance MoS 2 film synthesis. This result can also be applied in higher-level microelectronic systems, such as in digital logic circuit design.

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“…The SiO 2 /MoS 2 core-shell heterostructure gates and channels have been integrated into an U-shape. 205 The geometry takes advantage of avoiding the wet transfer process and minimizing surface contamination. The on/off ratio of the as-fabricated device shows a comparable value of 0.02 cm 2 V À1 s À1 .…”

Section: Thin Lm Transistors (Tfts)mentioning

confidence: 99%

Flexible electronics based on 2D transition metal dichalcogenides

et al. 2022

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Realizing an Omega-Shaped Gate MoS₂ Field-Effect Transistor Based on a SiO₂/MoS₂ Core–Shell Heterostructure

Cited by 26 publications

References 39 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

MoS₂-on-AlN Enables High-Performance MoS₂ Field-Effect Transistors through Strain Engineering

Flexible electronics based on 2D transition metal dichalcogenides

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Realizing an Omega-Shaped Gate MoS2 Field-Effect Transistor Based on a SiO2/MoS2 Core–Shell Heterostructure

Cited by 26 publications

References 39 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

MoS2-on-AlN Enables High-Performance MoS2 Field-Effect Transistors through Strain Engineering

Flexible electronics based on 2D transition metal dichalcogenides

Contact Info

Product

Resources

About

Realizing an Omega-Shaped Gate MoS₂ Field-Effect Transistor Based on a SiO₂/MoS₂ Core–Shell Heterostructure

MoS₂-on-AlN Enables High-Performance MoS₂ Field-Effect Transistors through Strain Engineering