Realization of Accurate On-Wafer Measurement Using Precision Probing Technique at Millimeter-Wave Frequency

Transmission loss of screen-printed metallization at millimeter-wave frequency

“…1 shows the constructed on-wafer measurement system for measurement frequencies ranging from 190 GHz to 340 GHz. The system set up for the measurement frequencies up to 110 GHz is shown in [8,9]. Table II lists the information of the measurement systems and conditions.…”

“…The measurement system was calibrated by thru-reflect-line (TRL) calibration with the commercialized ISS which is indicated in the table. The radio frequency signal detection technique was used for the probing procedure [8,9].…”

Long-Term Stability Test on On-Wafer Measurement System in Frequency Ranges up to 325 GHz

“…Further, the position of the apexes of the probe tips relative to the observed probe silhouette changes gradually even during normal use. The relative position of the apex of the tip to the apex of the probe silhouette of a probe is different by 10 µm, even if the position of the apex corresponds to the apex of the probe silhouette when the probe is new [22]. Second, the definition of the probe silhouette edge depends significantly on the judgment of the operator because of the ambiguous imaging of the silhouette edge.…”

Automated Contacting of On-Wafer Devices for RF Testing

“…This contact error is considered small or negligible for measurements up to a few GHz but becomes dominant when measuring above 110 GHz [1]. The conventional method of probing relies on the detection of the transversal movement of the probe tips as a result of the probe-substrate contact [2]- [4]. The operator evaluates images from a top-view microscope and decides on detection of transversal probe displacement as sufficient for a reliable subsequent microwave measurement.…”

“…However, these solutions necessitate a drastic overhaul of the measurement system, wafer design techniques and the measurement procedure, resulting in an even more complex measurement process as compared to conventional contact methods. Recent works [2]- [4] have explored the development of automated on-wafer contacting techniques to improve measurement repeatability. In [3], continuous evaluation of variations in the input reflection coefficient (Γ) measurements during the downward translation of the measurement probe allowed accurate detection of the contact.…”