Realization of a fast-response flexible ultraviolet photodetector employing a metal–semiconductor–metal structure InGaZnO photodiode

Zhou, Hua; Li, L.; Chen, Huiyao; Guo, Zhen; Jiao, Shujie; Sun, Wei‐Ming

doi:10.1039/c5ra17475a

Cited by 38 publications

(21 citation statements)

References 25 publications

(33 reference statements)

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“…To calculate the photoresponse time during the rise and decay, the best data fitting for the experimental findings was adopted to measure the decay time, which is in line with that used by other authors. [46][47][48][49][50][51] The detailed fitting procedure of the rise time and the decay time is shown in Figure S4 (Supporting Information). For Device 2 and Device 3, the response time (rise time and decay time) is shorter than 85 ms in the 2−5 V range.…”

Section: Device Characterizationsmentioning

confidence: 99%

High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation

et al. 2018

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Section: Device Characterizationsmentioning

confidence: 99%

High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation

et al. 2018

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“…Here, we applied a low oxygen-gas partial pressure against Ar of 3%, followed by a thermal annealing at 250 °C. Here, a low oxygen-gas pressure helps to get a high electron density, thus the Ohmic conduction at the contact 1,3,16 . However, a space charge limited conduction may also happen depending on the process and illumination conditions 17,18 .…”

Section: Resultsmentioning

confidence: 99%

Wavelength-dependent Optical Instability Mechanisms and Decay Kinetics in Amorphous Oxide Thin-Film Devices

Bae

Jeong

Lee

2019

Sci Rep

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We present a study on decay kinetics for a recovery process depending on the light wavelength selected in optical instability measurements against amorphous In-Ga-Zn-O (a-IGZO) thin-film devices. To quantitatively analyze optically-induced instability behaviors, a stretched exponential function (SEF) and its inverse Laplace transform are employed for a time- and energy-dependent analysis, respectively. The analyzed results indicate that a shorter wavelength light activates electrons largely from the valence band while metastable states are deionized with the respective photon energy ( hv ). In contrast, a longer wavelength illumination is mainly activating trapped electrons at metastable states, e.g. oxygen defects. In particular, at 500 nm wavelength ( hv ~ 2.5 eV), it shows an early persistency with a much higher activation energy. This also implies that the majority of metastable states remain ionized, thus the deionization energy >2.5 eV. However, the decay trend at 600 nm wavelength ( hv ~ 2 eV) is found to be less persistent and lower current level compared to the case at 500 nm wavelength, suggesting the ionization energy of metastable states >2 eV. Finally, it is deduced that majority of oxygen defects before the illumination reside within the energy range between 2 eV and 2.5 eV from the conduction band edge.

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“…The flexible photodetector shows relatively good photoresponse characteristics before and after bending and retains good folding reproducibility after repeated bending up to 500 cycles. More importantly, it shows a fast speed with response and recovery times of 0.8 ms and 2.0 ms, 33.8 ms, being much faster than that of the reported flexible ultraviolet detectors [6]. Boron nitride is also used in the fabrication of MSM devices.…”

Section: Introductionmentioning

confidence: 96%

“…For ultraviolet applications, wide band gap materials are preferably used to form MSM devices. As a fastresponse flexible ultraviolet photodetector employing a metal-semiconductor-metal structure InGaZnO photodiode is fabricated [6]. The flexible photodetector shows relatively good photoresponse characteristics before and after bending and retains good folding reproducibility after repeated bending up to 500 cycles.…”

Section: Introductionmentioning

confidence: 99%

Microwave Impedance Spectroscopy and Temperature Effects on the Electrical Properties of Au/BN/C Interfaces

Khanfar¹,

Qasrawi²,

Ghannam³

2017

Active and Passive Electronic Components

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In the current study, an Au/BN/C microwave back-to-back Schottky device is designed and characterized. The device morphology and roughness were evaluated by means of scanning electron and atomic force microscopy. As verified by the Richardson–Schottky current conduction transport mechanism which is well fitted to the experimental data, the temperature dependence of the current-voltage characteristics of the devices is dominated by the electric field assisted thermionic emission of charge carriers over a barrier height of ~0.87 eV and depletion region width of ~1.1 μm. Both the depletion width and barrier height followed an increasing trend with increasing temperature. On the other hand, the alternating current conductivity analysis which was carried out in the frequency range of 100–1400 MHz revealed the domination of the phonon assisted quantum mechanical tunneling (hopping) of charge carriers through correlated barriers (CBH). In addition, the impedance and power spectral studies carried out in the gigahertz-frequency domain revealed a resonance-antiresonance feature at frequency of ~1.6 GHz. The microwave power spectra of this device revealed an ideal band stop filter of notch frequency of ~1.6 GHz. The ac signal analysis of this device displays promising characteristics for using this device as wave traps.

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Realization of a fast-response flexible ultraviolet photodetector employing a metal–semiconductor–metal structure InGaZnO photodiode

Abstract: A flexible UV photodetector (PD) has been fabricated based on the amorphous InGaZnO film. It shows good photoresponse characteristics before and after bending, and fast response speed compared with the most reported flexible UV PDs.

Cited by 38 publications

References 25 publications

High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation

High-performance solar-blind flexible deep-UV photodetectors based on quantum dots synthesized by femtosecond-laser ablation

Wavelength-dependent Optical Instability Mechanisms and Decay Kinetics in Amorphous Oxide Thin-Film Devices

Microwave Impedance Spectroscopy and Temperature Effects on the Electrical Properties of Au/BN/C Interfaces

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