We report a zirconium-phenyl siloxane hybrid material (ZPH) that can be used as a robust LED encapsulant. The ZPH encapsulant was fabricated via hydrosilylation-curing of sol-gel derived multifunctional (vinyl- and hydride-functions) siloxane resins containing phenyl-groups and Zr-O-Si heterometallic phase for achieving a high refractive index (n ≈ 1.58). In thermal aging, the ZPH LED encapsulant exhibited superior performances with a high optical transparency (∼88% at 450 nm) and exhibited high thermal stability (no yellowing at 180 °C for 1008 h), compared to a commercial LED encapsulant (OE-6630, Dow Corning Corporation). This suggests potential for ZPH to be a robust LED encapsulant.

An ultraviolet (UV) transparent and stable methyl-siloxane hybrid material was prepared by a facile sol-gel method. The transparency and stability of a UV-LED encapsulant is an important issue because it affects UV light extraction efficiency and long-term reliability. We introduced a novel concept for UV-LED encapsulation using a thermally curable oligosiloxane resin. The encapsulant was fabricated by a hydrosilylation of hydrogen-methyl oligosiloxane resin and vinyl-methyl siloxane resin, and showed a comparable transmittance to polydimethylsiloxane (PDMS) in the UVB (∼300 nm) region. Most remarkably, the methyl-siloxane hybrid materials exhibited long-term UV stability under light soaking in UVB (∼300 nm) for 1000 h.

Sol-gel synthesized linear oligosiloxane-based hybrid material for a thermally-resistant light emitting diode (LED) encapsulant

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This paper provides a review of optical devices based on a wide band-gap transparent conducting oxide (TCO) while discussing related physical mechanisms and potential applications. Intentionally using a light-induced metastability mechanism of oxygen defects in TCOs, it is allowed to detect even visible lights, eluding to a persistent photoconductivity (PPC) as an optical memory action. So, this PPC phenomenon is naturally useful for TCO-based optical memory applications, e.g., optical synaptic transistors, as well as photo-sensors along with an electrical controllability of a recovery speed with gate pulse or bias. Besides the role of TCO channel layer in thin-film transistor structure, a defective gate insulator can be another approach for a memory operation with assistance for gate bias and illuminations. In this respect, TCOs can be promising materials for a low-cost transparent optoelectronic application.