A metal-semiconductor-metal (MSM) structure ultraviolet photodetector has been fabricated from amorphous InGaZnO (a-IGZO) film at room temperature. The photodetector can work without consuming external power and show a responsivity of 4 mA/W. The unbiased photoresponse characteristic is attributed to the hole-trapping process occurred in the electrode/a-IGZO interface, and a physical model based on band energy theory is proposed to explain the origin of the photoresponse at zero bias in our device. Our findings may provide a way to realize unbiased photoresponse in the simple MSM structure.
A flexible UV photodetector (PD) has been fabricated based on the amorphous InGaZnO film. It shows good photoresponse characteristics before and after bending, and fast response speed compared with the most reported flexible UV PDs.
2D bimetal metal organic frameworks (MOFs) are recognized as one of the most promising electrocatalysts for oxygen evolution reaction (OER). Herein, a facile approach was proposed to construct NiFe-MOF nanosheets...
For sensitized solar cells, photoanodes combining the advantages of TiO2 nanoparticles (high specific surface area) and one-dimensional (1D) nanostructures (fast transport channels) are ideal for obtaining highly efficient sensitized solar cells.
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