Réalisation et études des couches minces évaporées de SnSe2

Quan, Dang Tran; Fèvre, J.J. Le

doi:10.1016/0040-6090(82)90399-6

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Electrical Properties1

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1984

1992

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Cited by 4 publications

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“…In addition, X-ray diffraction diagram texture of "thick" film is very pronounced as compared to "thin" speciniens. The similar results were observed in SnSe, thin filnis [22]. The mobility and carrier density increase with the increasing temperature which indicates the predominance of grain boundary potential barrier mechanism in these films.…”

Section: Electrical Propertiessupporting

confidence: 82%

Electrical properties and optical absorption of SnSe evaporated thin films

Quan

1984

Phys. Stat. Sol. (a)

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Resistivity, Hall effect, and optical absorption coefficient measurements are performed on SnSe evaporated thin films. The resistivity decreases with increasing temperature whereas the Hall mobility and carrier density increase with increasing temperature. An exponential 1/T law is observed for each of these variations. The results are explained in terms of a grain boundary potential barrier mechanism. The optical absorption coefficient is measured at 300 K over the photon energy range 0.8 to 1.3 eV. An analysis of absorption measurements indicates that the SnSe thin film absorption edge is due to allowed direct transitions across an energy gap of about 1.21 eV.

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Section: Electrical Propertiessupporting

confidence: 82%