Realisation and metrological characterisation of thickness standards below 100�nm

Thomsen-Schmidt, Peter; Hasche, K.; Ulm, G.; Herrmann, Konrad; Krumrey, Michael; Ade, G.; Stümpel, J.; Busch, I.; Schädlich, Stefan; Schindler, Axel; Frank, W.; Hirsch, D.; Procop, M.; Beck, Uwe

doi:10.1007/s00339-003-2273-7

Cited by 17 publications

(9 citation statements)

References 4 publications

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“…The present cleaning methods [2] do this adequately for relatively inert materials such as SiO 2 . With suitable experimental design, other thickness traceable methods, such as stylus methods [22] , transmission electron microscopy (TEM) [2,23] or XRF analysis, [24] not used in the present work, could also be added to the wavelength methods.…”

Section: Discussionmentioning

confidence: 99%

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Ultra‐thin SiO₂ on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO₂ on Si

Seah

Unger

Wang³

et al. 2009

Surface & Interface Analysis

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Results from a study conducted between National Metrology Institutes (NMIs) for the measurements of the absolute thicknesses of ultra-thin layers of SiO 2 on Si are reported. These results are from a key comparison and associated pilot study under the auspices of the Consultative Committee for Amount of Substance. 'Amount of substance' may be expressed in many ways, and here the measurand is the thickness of the silicon oxide layers with nominal thicknesses in the range 1.5-8 nm on Si substrates, expressed as the thickness of SiO 2 . Separate samples were provided to each institute in containers that limited the carbonaceous contamination to approximately <0.3 nm. The SiO 2 samples were of ultra-thin on (100) and (111) orientated wafers of Si. The measurements from the laboratories which participated in the study were conducted using ellipsometry, neutron reflectivity, X-ray photoelectron spectroscopy or X-ray reflectivity, guided by the protocol developed in an earlier pilot study. A very minor correction was made in the different samples that each laboratory received. Where appropriate, method offset values attributed to the effects of contaminations, from the earlier pilot study, were subtracted. Values for the key comparison reference values (agreed best values from a Consultative Committee study) and their associated uncertainties for these samples are then made from the weighted means and the expanded weighted standard deviations of the means of these data. These results show a dramatic improvement on previous comparisons, leading to 95% uncertainties in the range 0.09-0.27 nm, equivalent to 0.4-1.0 monolayers over the 1.5-8.0 nm nominal thickness range studied. If the sample-to-sample uncertainty is reduced from its maximum estimate to the most likely value, these uncertainties reduce to 0.05-0.25 nm or ∼1.4% relative standard uncertainties. The best results achieve ∼1% relative standard uncertainty. It is concluded that XPS has now been made fully traceable to the SI, for ultra-thin thermal SiO 2 on Si layers, by calibration using wavelength methods in an approach that may be extended to other material systems.

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Section: Discussionmentioning

confidence: 99%

“…U n and U θ have random, type A, contributions whereas the other terms largely involve systematic type B contributions. For the analysis conducted using the reference geometry established by NPL, [11] U E is less than 0.025 nm, [22,26] U A is negligible for an analyser cone entrance semi-angle <6…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 99%

Ultra‐thin SiO₂ on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO₂ on Si

Seah

Unger

Wang³

et al. 2009

Surface & Interface Analysis

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“…Applying high quality standard samples is a crucial issue in analysis of single layers and multiple layer films. Some information on the manufacture and calibration of reference standards of thin films and coatings were reported elsewhere [81,82]. Unfortunately, in most cases, the reference standards similar to unknown samples are not available.…”

Section: Calibrationmentioning

confidence: 99%

Quantitative X-ray fluorescence analysis of samples of less than ‘infinite thickness’: Difficulties and possibilities

Sitko

2009

Spectrochimica Acta Part B: Atomic Spectroscopy

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“…Within the scope of a BMBF project, material measures were manufactured and metrologically characterized for the nanometre range [20]. Calibration procedures were developed and tested under conditions related to practice.…”

Section: Film Thickness Standardsmentioning

confidence: 99%

Standards for the Calibration of Instruments for Dimensional Nanometrology

Koenders¹,

Dziomba²,

Thomsen-Schmidt³

et al. 2005

Nanoscale Calibration Standards and Methods

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Realisation and metrological characterisation of thickness standards below 100�nm

Cited by 17 publications

References 4 publications

Ultra‐thin SiO₂ on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO₂ on Si

Ultra‐thin SiO₂ on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO₂ on Si

Quantitative X-ray fluorescence analysis of samples of less than ‘infinite thickness’: Difficulties and possibilities

Standards for the Calibration of Instruments for Dimensional Nanometrology

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Realisation and metrological characterisation of thickness standards below 100�nm

Cited by 17 publications

References 4 publications

Ultra‐thin SiO2 on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO2 on Si

Ultra‐thin SiO2 on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO2 on Si

Quantitative X-ray fluorescence analysis of samples of less than ‘infinite thickness’: Difficulties and possibilities

Standards for the Calibration of Instruments for Dimensional Nanometrology

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Product

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Ultra‐thin SiO₂ on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO₂ on Si

Ultra‐thin SiO₂ on Si IX: absolute measurements of the amount of silicon oxide as a thickness of SiO₂ on Si