2005
DOI: 10.1016/j.cplett.2005.04.082
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Real-time observation of liquid Indium unusual behavior inside silica nanotubes

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Cited by 20 publications
(19 citation statements)
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“…This was likely due to the poor physical contact between the constituting parts of the circuit. Under such conditions and using 300 kV electron irradiation, a nanotube surface may be charged up in a way similar to that found by us for insulating nanotubes (SiO 2 [25,27] and BN [12] ).…”
mentioning
confidence: 85%
“…This was likely due to the poor physical contact between the constituting parts of the circuit. Under such conditions and using 300 kV electron irradiation, a nanotube surface may be charged up in a way similar to that found by us for insulating nanotubes (SiO 2 [25,27] and BN [12] ).…”
mentioning
confidence: 85%
“…= 156°C) was also filled into a CNT and a silica nanotube to study its expansion behavior in the liquid state. [21,22,25] As the temperature is lowered, In cannot recover to its initial position in the CNT, and the melting behavior is significantly different from that for a macroscopic state. [21] On the other hand, the VLS-grown In-silica nanotube shows reversible properties, and its range of operation is between 20 and 500°C.…”
Section: Liquid-state Nanothermometersmentioning
confidence: 96%
“…We report here the point contact reactions between Si nanowires and Co nanodots investigated by in situ highresolution transmission electron microscopy (HRTEM), which is a powerful means for the study of nanoscale kinetics. 15,[20][21][22][23][24][25][26][27][28][29] We have grown heterostructure of CoSi 2 /Si/ CoSi 2 with atomically sharp epitaxial interfaces. The metallic CoSi 2 may serve as the source-drain contacts to the Si in the heterostructure; it is the first step to produce a nanoscale field-effect transistor.…”
mentioning
confidence: 99%