Read/write operation of spin-based MOSFET using highly spin-polarized ferromagnet/MgO tunnel barrier for reconfigurable logic devices

Silicon spintronics: Progress and challenges

“…The introduction of a tunnel barriers to boost the spin injection efficiency and magnetoresistance ration for parallel/anti-parallel source/drain magnetization orientation reduces the on-current. However, the magnetoresistance ratio of 10% demonstrated at 12K for a 10µm long silicon [132] channel is not sufficient for applications. It is far inferior to the magnetoresistance ratio in magnetic tunnel junctions, where the two ferromagnetic metals are separated by a thin tunnel barrier.…”

Electrical Spin Injection from Ferromagnetic Nanocontacts into Nondegenerated Silicon at Low Temperatures

“…Much lower values for L sf , up to 300 nm, were obtained in lateral devices with diffusive injection for highly doped silicon [10]. Local measurement of spin polarized current injected and detected from ferromagnetic clusters separated in average by 50nm on low doped silicon was performed by our group with polarization up to 1% [11,12] and values up to 12% were achieved by Marukame and co-authors [13] 14]. Precisely one of the points in this paper is to discuss the value of formula (1).…”

Scalability of spin field programmable gate array: A reconfigurable architecture based on spin metal-oxide-semiconductor field effect transistor

“…Ferromagnetic materials provide stable and robust nonvolatile memory [2]. Fig.1(a) shows a spin MOSFET in which the write process is carried out by using magnetic tunneling junction (MTJ) [3,4]. Spin MOSFET directly couples logic element with nonvolatile memory element, opening up a path to a new style of logic-in-memory architecture [5].…”