We show direct evidence for importance of the interface resistance to electrically create large spin accumulation in silicon (Si). With increasing the thickness of the tunnel barrier in CoFe/MgO/n+-Si devices, a marked enhancement of spin accumulation signals can be observed in the electrical Hanle-effect measurements. To demonstrate room-temperature detection of the spin signals in three-terminal methods, the influence of the spin absorption from Si into CoFe through a tunnel barrier should be taken into account.
We report on the preparation of MnxFe3−xO4 (x=0, 0.1, or 0.5) epitaxial thin films using a pulsed-laser deposition technique. Conditions for modified film formation are discussed, in addition to their electrical and magnetic properties in relation to the potential development of room temperature spin electronics devices. The film with x=0.1 could be fabricated at a higher substrate temperature (600°C) than the Fe3O4 thin film without Mn doping. The doped films exhibited low resistivity of about 7.0×10−3(x=0.1)–9.0×10−2(x=0.5)Ωcm at room temperature. Moreover, a spin polarization of the carrier of MnxFe3−xO4 (x=0, 0.1, or 0.5) films was confirmed at room temperature by examination of anomalous Hall coefficient measurements.
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