Silicon spintronics: Progress and challenges

Sverdlov, Viktor; Selberherr, S.

doi:10.1016/j.physrep.2015.05.002

Cited by 63 publications

(34 citation statements)

References 167 publications

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“…Nanostructures of the latter group have one-dimensional (1D) character and as such they can reveal an extra advantage – a strong suppression of spin-orbit scattering2425. However, in addition to quite low spin splitting, in most cases of Si reconstructions a strong interaction between adatoms and the surrounding atoms of the silicon matrix occurs which is an undesirable effect (mixing of spin-polarized and unpolarized electrons).…”

mentioning

confidence: 99%

Purely one-dimensional bands with a giant spin-orbit splitting: Pb nanoribbons on Si(553) surface

Kopciuszyński

Krawiec

Zdyb

et al. 2017

Sci Rep

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We report on a giant Rashba type splitting of metallic bands observed in one-dimensional structures prepared on a vicinal silicon substrate. A single layer of Pb on Si(553) orders this vicinal surface making perfectly regular distribution of monatomic steps. Although there is only one layer of Pb, the system reveals very strong metallic and purely one-dimensional character, which manifests itself in multiple surface state bands crossing the Fermi level in the direction parallel to the step edges and a small band gap in the perpendicular direction. As shown by spin-polarized photoemission and density functional theory calculations these surface state bands are spin-polarized and completely decoupled from the rest of the system. The experimentally observed spin splitting of 0.6 eV at room temperature is the largest found to now in the silicon-based metallic nanostructures, which makes the considered system a promising candidate for application in spintronic devices.

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mentioning

confidence: 99%

Purely one-dimensional bands with a giant spin-orbit splitting: Pb nanoribbons on Si(553) surface

Kopciuszyński

Krawiec

Zdyb

et al. 2017

Sci Rep

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“…4(b), and the analytical results are the solutions to the Eqs. (11) and (13). The discrete energy levels from the upper edge or the lower edge contribute a quantized conductance e 2 /h.…”

Section: B Manipulate the Discrete Energy Levels By The Angle Of Plamentioning

confidence: 99%

“…Specifically, the propagation direction of the carriers of the same spin is reversed at the opposite edge. Such unique transport properties enable QSH systems to own promising applications in low-power electronics and spintronics [9][10][11][12] . In the early years, the studies of QSH systems mainly focus on group-VI monolayers (e.g., graphene 1,2 and silicene 13,14 ) and semiconductor quantum wells (e.g., HgTe/CdTe 3,4 and InAs/GaSb 15,16 ).…”

Section: Introductionmentioning

confidence: 99%

Engineering a topological quantum dot device through planar magnetization in bismuthene

Zhou

Cheng

et al. 2019

Phys. Rev. B

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The discovery of quantum spin Hall materials with huge bulk gaps in experiment, such as bismuthene, provides a versatile platform for topological devices. We propose a topological quantum dot (QD) device in bismuthene ribbon in which two planar magnetization areas separate the sample into a QD and two leads. At zero temperature, peaks of differential conductance emerge, demonstrating the discrete energy levels from the confined topological edge states. The key parameters of the QD, the tunneling coupling strength with the leads and the discrete energy levels, can be controlled by the planar magnetization and the sample size. Specially, different from the conventional QD, we find that the angle between two planar magnetization orientations provides an effective way to manipulate the discrete energy levels. Combining the numerical calculation and the theoretical analysis, we identify that such manipulation originates from the unique quantum confinement effect of the topological edge states. Based on such mechanism, we find the spin transport properties of QDs can also be controlled.

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“…In silicon the electron spin relaxation is determined by the inter-valley transitions [14] and can be efficiently controlled by stress [15]. In silicon channels, uniaxial stress generating shear strain is particularly efficient to suppress the spin relaxation [16] as it lifts the degeneracy between the two unprimed subband ladders [17]. In addition, choosing the spin injection direction also boosts the spin lifetime by a factor of two [18].…”

Section: Spin-based Switches For Digital Applicationsmentioning

confidence: 99%

Demands for spin-based nonvolatility in emerging digital logic and memory devices for low power computing

Sverdlov

Selberherr²

2018

FACTA U EE

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Miniaturization of semiconductor devices is the main driving force to achieve an outstanding performance of modern integrated circuits. As the industry is focusing on the development of the 3nm technology node, it is apparent that transistor scaling shows signs of saturation. At the same time, the critically high power consumption becomes incompatible with the global demands of sustaining and accelerating the vital industrial growth, prompting an introduction of new solutions for energy efficient computations. Probably the only radically new option to reduce power consumption in novel integrated circuits is to introduce nonvolatility. The data retention without power sources eliminates the leakages and refresh cycles. As the necessity to waste time on initializing the data in temporarily unused parts of the circuit is not needed, nonvolatility also supports an instanton computing paradigm. The electron spin adds additional functionality to digital switches based on field effect transistors. SpinFETs and SpinMOSFETs are promising devices, with the nonvolatility introduced through relative magnetization orientation between the ferromagnetic source and drain. A successful demonstration of such devices requires resolving several fundamental problems including spin injection from metal ferromagnets to a semiconductor, spin propagation and relaxation, as well as spin manipulation by the gate voltage. However, increasing the spin injection efficiency to boost the magnetoresistance ratio as well as an efficient spin control represent the challenges to be resolved before these devices appear on the market. Magnetic tunnel junctions with large magnetoresistance ratio are perfectly suited as key elements of nonvolatile CMOS-compatible magnetoresistive embedded memory. Purely electrically manipulated spin-transfer torque and spin-orbit torque magnetoresistive memories are superior compared to flash and will potentially compete with DRAM and SRAM. All major foundries announced a near-future production of such memories. Two-terminal magnetic tunnel junctions possess a simple structure, long retention time, high endurance, fast operation speed, and they yield a high integration density. Combining

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Silicon spintronics: Progress and challenges

Cited by 63 publications

References 167 publications

Purely one-dimensional bands with a giant spin-orbit splitting: Pb nanoribbons on Si(553) surface

Purely one-dimensional bands with a giant spin-orbit splitting: Pb nanoribbons on Si(553) surface

Engineering a topological quantum dot device through planar magnetization in bismuthene

Demands for spin-based nonvolatility in emerging digital logic and memory devices for low power computing

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