Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride

Yusup, Luchana L.; Park, Jaemin; Noh, Yong-Ho; Kim, Sun–Jae; Lee, Wonjun; Park, Sora; Kwon, Young–Kyun

doi:10.1039/c6ra10909h

Cited by 36 publications

(42 citation statements)

References 59 publications

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“…By introducing the H2 plasma before the N2 plasma, efficient ligand removal from the surface can be achieved by H radicals with a long lifetime. The SiNx films with an excellent step coverage and wet etch rate were obtained [21][22][23][24]. The wet etch rate (WER) test was performed to investigate SiN x etching properties.…”

Section: Characteristics Of Sin X Thin Filmsmentioning

confidence: 99%

“…The PEALD of SiN x using aminosilane and NH 3 plasma leads to a reduced growth rate because the H-and NH x -terminated surface is not undercoordinated, which in turn inhibits precursor adsorption. In contrast, N 2 plasma is able to generate reactive undercoordinated bare surface sites; PEALD using aminosilane and N 2 plasma reveals quite sensible growth rates [21][22][23][24].…”

Section: Introductionmentioning

confidence: 99%

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Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma

et al. 2019

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Silicon nitride (SiNx) thin films using 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2) and N2 plasma were investigated. The growth rate of SiNx thin films was saturated in the range of 200–500 °C, yielding approximately 0.38 Å/cycle, and featuring a wide process window. The physical and chemical properties of the SiNx films were investigated as a function of deposition temperature. As temperature was increased, transmission electron microscopy (TEM) analysis confirmed that a conformal thin film was obtained. Also, we developed a three-step process in which the H2 plasma step was introduced before the N2 plasma step. In order to investigate the effect of H2 plasma, we evaluated the growth rate, step coverage, and wet etch rate according to H2 plasma exposure time (10–30 s). As a result, the side step coverage increased from 82% to 105% and the bottom step coverages increased from 90% to 110% in the narrow pattern. By increasing the H2 plasma to 30 s, the wet etch rate was 32 Å/min, which is much lower than the case of only N2 plasma (43 Å/min).

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Section: Characteristics Of Sin X Thin Filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma

et al. 2019

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“…The findings are consistent with prior work that employed tetraiodosilane and titanium tetraiodide to generate Ti-Si-N diffusion barriers for copper metallization at low temperatures. 73 In terms of the PE-ALD adsorption and decomposition mechanisms for inorganic sources, one relevant report 82 analyzed the reactivity of β-Si 3 N 4 surface sites with Si 2 Cl 6 (using SiH 4 as comparative baseline) during the PE-ALD Si 2 Cl 6 substrate exposure step by combining ab initio density functional theory calculations with actual PE-ALD SiN x film deposition. The analysis examined three types of substrate surface sites: (a) hydrogen passivated N and Si sites (NH/SiH); (b) NH and SiNH 2 sites formed during the NH 3 exposure step (NH/SiNH 2 ); and (c) under-coordinated bare Si=N sites.…”

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

“…These findings led to the identification of a 3 step PE-ALD process to attain the most energetically favorable surface sites during the Si source PE-ALD substrate exposure step. 82 Another investigation 11 also explored the role of a N 2 plasma pre-treatment prior to the SiH 4 exposure step on Si substrates and found that atomic N and N + are the central reactant species that adsorb to the Si surface to form Si-N. The latter then act as reactive adsorption spots for SiH 4 at N dangling bond sites, generating adsorbed SiH x and NH x species.…”

Section: Atomic Layer Deposition (Ald)mentioning

confidence: 99%

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Kaloyeros

Jové

Goff

et al. 2017

ECS J. Solid State Sci. Technol.

127

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This article provides an overview of the state-of-the-art chemistry and processing technologies for silicon nitride and silicon nitride-rich films, i.e., silicon nitride with C inclusion, both in hydrogenated (SiNx:H and SiNx:H(C)) and non-hydrogenated (SiNx and SiNx(C)) forms. The emphasis is on emerging trends and innovations in these SiNx material system technologies, with focus on Si and N source chemistries and thin film growth processes, including their primary effects on resulting film properties. It also illustrates that SiNx and its SiNx(C) derivative are the focus of an ever-growing research and manufacturing interest and that their potential usages are expanding into new technological areas.

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“…NH 3 is considered a good alternative reactant, and has eventually become the most widely used reactant for SiN x thermal ALD. As shown in Table 1 , several chlorosilane precursors including SiCl 4 , SiH 2 Cl 2 , Si 2 Cl 6 and Si 3 Cl 8 have been extensively investigated for SiN x thermal ALD [ 17 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 ]. It is also particularly important to point out the fact that SiN x thermal ALD using non-chlorosilane-based precursors has not yet been reported.…”

Section: Current Research Progressmentioning

confidence: 99%

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

et al. 2016

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With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiNx) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. These benefits include not only high conformality and atomic-scale thickness control, but also low deposition temperatures. Over the past 20 years, recognition of the remarkable features of SiNx ALD, reinforced by experimental and theoretical investigations of the underlying surface reaction mechanism, has contributed to the development and widespread use of ALD SiNx thin films in both laboratory studies and industrial applications. Such recognition has spurred ever-increasing opportunities for the applications of the SiNx ALD technique in various arenas. Nevertheless, this technique still faces a number of challenges, which should be addressed through a collaborative effort between academia and industry. It is expected that the SiNx ALD will be further perceived as an indispensable technique for scaling next-generation ultra-large-scale integration (ULSI) technology. In this review, the authors examine the current research progress, challenges and future prospects of the SiNx ALD technique.

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Reactivity of different surface sites with silicon chlorides during atomic layer deposition of silicon nitride

Abstract: The reactivity of surface sites plays a very important role to determine the thermodynamics and kinetics of ALD processes.

Cited by 36 publications

References 59 publications

Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma

Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma

Review—Silicon Nitride and Silicon Nitride-Rich Thin Film Technologies: Trends in Deposition Techniques and Related Applications

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

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