Reactive molecular beam epitaxy of aluminium nitride

Yoshida, Sadafumi; Misawa, S.; Fujii, Youhei; Takada, S.; Hayakawa, Hisao; Gonda, S.; Itoh, Akio

doi:10.1116/1.570166

Cited by 192 publications

(26 citation statements)

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“…This is due, in part, to the possibility of detailed studies of the growth process with standard MBE toolsReflection High Energy Electron Diffraction (RHEED) and Desorption Mass Spectrometry (DMS) [5] [6] [7] [8] [9]. Additional progress has been achieved in the last few years by implementation in MBE of gaseous ammonia as the source of reactive nitrogen [10] [11] [12] [13]. The ammonia source provides relatively high growth rates, comparable with those of MOCVD, and produces high-quality epitaxial layers [11] [12] [13] [14] without having the effects of accelerated ions on material properties (as takes place in MBE based on plasma activated molecular nitrogen [15]).…”

Section: Introductionmentioning

confidence: 99%

The role of gaseous species in group-III nitride growth

Karpov¹,

Makarov

Ramm

1997

MRS Internet j. nitride semicond. res.

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A quasi-thermodynamic model accounting for kinetics of molecular nitrogen evaporation is applied to simulate the growth of binary and ternary group-III nitrides using atomic group-III elements and molecular ammonia as the sources. The values of the molecular nitrogen evaporation coefficients from the surface of GaN and AlN necessary for the simulation are extracted from experiments on free evaporation of the crystals in vacuum, while for InN only estimates are available. The growth process of AlN and InN is studied by analyzing the composition of the desorbed vapor species that are thought to influence the native defect formation in group-III nitrides. Different channels of desorption from the surfaces of group-III nitrides (related either to group-III atoms or to their hydrides) are compared. Specific features of the growth processes under the metal-rich and N-rich conditions are analyzed. The developed approach is extended to study the growth of the ternary compounds GaInN and AlGaN. The growth rate of ternary compounds versus temperature shows a two-drop behavior corresponding to the rapid increase of the respective group-III atom desorption. The effect is accompanied by a corresponding stepwise change in the solid phase composition. Factors retarding the growth of ternary compounds -the miscibility gap related to internal strain accumulated in the solid phase due to the lattice mismatch of binary constituents, and the extra liquid phase formation during growth -are discussed with respect to GaInN.

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Section: Introductionmentioning

confidence: 99%

The role of gaseous species in group-III nitride growth

Karpov¹,

Makarov

Ramm

1997

MRS Internet j. nitride semicond. res.

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“…[2±6] AlN thin films are commonly deposited by a CVD technique. Alkyl aluminum compounds such as [Al(NR 2 ) 3 ] 2 , [HAl(NR 2 ) 2 ] 2 (R = Me, Et), [7] (Me 2 AlNH 2 ) 3 , [8] (Et 2 AlN 3 ) 3 , [9] and (Me 2 AlN i Pr 2 ) 2 , [10] have been reported as single-source MOCVD precursors. The vapor pressure of these precursors is generally low (<< 1 torr at room temperature), a drawback for practical applications.…”

Section: Introductionmentioning

confidence: 99%

MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2

Joo

Jung

Cho

et al. 2002

Chem. Vap. Deposition

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A new type of precursor, AlCl 3 : t BuNH 2 adduct, has been designed. The synthesis, preparation, and characterization of AlN thin films have been carried out. The AlCl 3 : t BuNH 2 adduct was a stable solid material with high vapor pressure (2.5 torr at 65 C) which was purified by sublimation. The structure of the precursor was fully identified by an X-ray single crystal analysis, elemental analysis, and nuclear magnetic resonance (NMR). The CVD process was performed using hydrogen under atmospheric pressure as the carrier gas. The film was characterized by Rutherford backscattering spectroscopy (RBS), Auger electron spectroscopy (AES), X-ray diffraction (XRD), and scanning electron microscopy (SEM). The quality of the film prepared from the precursor was excellent, with a preferential c-axis orientation, exceptionally low carbon contamination, and an ideal N/Al atomic ratio.

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“…Over the past few decades, considerable numbers of studies ha~e been conducted on the fabrication and characterization of A1N thin films. The preparation techniques include chemical vapour deposition (CVD) [3][4][5], reactive molecularbeam epitaxy (MBE) [6] and reactive sputtering [7 10], etc. Reactive sputtering at low temperature is a very simple and the least expensive of these processes and it has the advantages of a wide variety of possible substrate materials and easy fabrication of the metalelectrode configuration in SAW devices [11].…”

Section: Introductionmentioning

confidence: 99%

Effects of sputtering pressure and nitrogen concentration on the preferred orientation of AIN thin films

Lee

1994

J Mater Sci: Mater Electron

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Aluminium-nitride films were prepared on glass substrates by reactive radio frequency (r.f.) magnetron sputtering in argon/nitrogen gas mixtures containing 25 --~ 75% nitrogen at substrate temperatures below 150 °C. It is important to control the crystallographic orientation and the surface morphology of the films 'with the deposition parameters for surface-acousticwave (SAW) devices. The change of crystallographic orientation with the sputtering pressure and the nitrogen concentration was calculated from the texture coefficient of the (0002) plane based on X-ray diffraction (XRD) patterns. It was found that a change of the C-axis from a parallel to a normal orientation, with respect to the substrate surface, occurred with a decrease in the sputtering pressure and an increase in the nitrogen concentration. From observations of the cross-section and the surface morphology, aluminium-nitride films exhibited a columnar structure and the grain size at the film surface increased an increase in the sputtering pressure and with a decrease in the nitrogen concentration.

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Reactive molecular beam epitaxy of aluminium nitride

Cited by 192 publications

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The role of gaseous species in group-III nitride growth

The role of gaseous species in group-III nitride growth

MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2

Effects of sputtering pressure and nitrogen concentration on the preferred orientation of AIN thin films

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