2002
DOI: 10.1002/1521-3862(20021203)8:6<273::aid-cvde273>3.0.co;2-o
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MOCVD of Aluminum Nitride Thin Films with a New Type of Single-Source Precursor: AlCl3:tBuNH2

Abstract: A new type of precursor, AlCl 3 : t BuNH 2 adduct, has been designed. The synthesis, preparation, and characterization of AlN thin films have been carried out. The AlCl 3 : t BuNH 2 adduct was a stable solid material with high vapor pressure (2.5 torr at 65 C) which was purified by sublimation. The structure of the precursor was fully identified by an X-ray single crystal analysis, elemental analysis, and nuclear magnetic resonance (NMR). The CVD process was performed using hydrogen under atmospheric pressure … Show more

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Cited by 10 publications
(6 citation statements)
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“…The structure of 6 shows that the aluminum atom adopts a distorted-tetrahedral geometry. The Al−N bond distance of 1.9641(15) Å is shorter than the corresponding bond distance in 1 but longer than in the related complex [AlCl 3 {NH 2 ( t Bu)}] (Al−N = 1.939(2) Å). , There are no other packing interactions of note. The formation of compound 6 was surprising, as the expected product was either the 1:1 adduct [MeAlCl 2 {NH( t Bu)(SiMe 3 )}] or the dimeric complex [MeAlCl{NH( t Bu)] 2 .…”
Section: Resultsmentioning
confidence: 81%
See 1 more Smart Citation
“…The structure of 6 shows that the aluminum atom adopts a distorted-tetrahedral geometry. The Al−N bond distance of 1.9641(15) Å is shorter than the corresponding bond distance in 1 but longer than in the related complex [AlCl 3 {NH 2 ( t Bu)}] (Al−N = 1.939(2) Å). , There are no other packing interactions of note. The formation of compound 6 was surprising, as the expected product was either the 1:1 adduct [MeAlCl 2 {NH( t Bu)(SiMe 3 )}] or the dimeric complex [MeAlCl{NH( t Bu)] 2 .…”
Section: Resultsmentioning
confidence: 81%
“…Recently the 1:1 adduct [AlCl 3 {NH 2 ( t Bu)}] was successfully used as a precursor to AlN thin films, with little carbon contamination incorporated . Therefore, to study the decomposition pathways of some of the complexes described herein, thermal gravimetric analyses (TGA) were carried out.…”
Section: Resultsmentioning
confidence: 99%
“…[1][2][3] Volatile group 13-15 donor-acceptor complexes are prospective single-source precursors (SSP) for the chemical vapor deposition (CVD) of binary and composite nitrides. 4,5 Volatility and the strength of the donor-acceptor bond are the two key characteristics of a successful SSP. Volatility of the solid adduct is determined by its sublimation enthalpy, which in turn depends on the structural properties of the compounds.…”
Section: Introductionmentioning
confidence: 99%
“…2 Complexes with large donor-acceptor bond energies and sufficient volatility, such as the pyridine adducts MX 3 ·Py, reveal a significant concentration in vapors even at elevated (600-800 K) temperatures. 2,6 Usually, complexes with monodentate donors, for example AlCl 3 ·NH 2 t Bu, 5 are used as SSP for the synthesis of binary 13-15 compounds. For generating ternary and composite nitrides SSP should have different group 13 elements in the same molecule.…”
Section: Introductionmentioning
confidence: 99%
“…Molecular rings and cage‐compounds with an Al‐N skeleton have been extensively studied in view of their structural diversity and the application to obtain the semi‐conductor AlN . If an alane X 3 Al is allowed to react with an amine N Y 3 , the chemical nature and partial charge of the substituent plays the key role for the formation of the final product.…”
Section: Introductionmentioning
confidence: 99%