Effects of sputtering pressure and nitrogen concentration on the preferred orientation of AIN thin films

Abstract

Aluminium-nitride films were prepared on glass substrates by reactive radio frequency (r.f.) magnetron sputtering in argon/nitrogen gas mixtures containing 25 --~ 75% nitrogen at substrate temperatures below 150 °C. It is important to control the crystallographic orientation and the surface morphology of the films 'with the deposition parameters for surface-acousticwave (SAW) devices. The change of crystallographic orientation with the sputtering pressure and the nitrogen concentration was calculated from the texture coefficient of the (0002) plane based on X-ray diffraction (XRD) patterns. It was found that a change of the C-axis from a parallel to a normal orientation, with respect to the substrate surface, occurred with a decrease in the sputtering pressure and an increase in the nitrogen concentration. From observations of the cross-section and the surface morphology, aluminium-nitride films exhibited a columnar structure and the grain size at the film surface increased an increase in the sputtering pressure and with a decrease in the nitrogen concentration.

Effect of deposition parameters on the growth rate and dielectric properties of the Ba(SnxTi1−x)O3 thin films prepared by radio frequency magnetron sputtering

“…At a given rf power, the thermalizatoin region shifts toward the target by increasing O 2 partial pressure. 22 This result leads to the oxidation of the target 23,24 and possible resputtering of the film 25 and created the decreased deposition rate of the BS x T 1−x thin films.…”

Relatively low temperature synthesis of hexagonal tungsten carbide films by N doping and its effect on the preferred orientation, phase transition, and mechanical properties

“…[44][45][46][47][48][49][50][51] Other authors, such as Yadav et al, 52 studied the effects of substrate temperature on the preferred orientation for hexagonal GaN thin films, in which it is suggested that the preferred orientation depends strongly on surface diffusion of adatoms during growth stage. [44][45][46][47][48][49][50][51] Other authors, such as Yadav et al, 52 studied the effects of substrate temperature on the preferred orientation for hexagonal GaN thin films, in which it is suggested that the preferred orientation depends strongly on surface diffusion of adatoms during growth stage.…”

Effect of deposition pressure on the dielectric properties of bismuth magnesium niobium titanium thin films prepared by RF magnetron sputtering

“…As seen in Table 2, the surface roughness of BMNT thin films increases from 7.56 nm to 15.64 nm as the deposition pressure decreases from 5 Pa to 1 Pa. This phenomenon can be expressed as follows [17,18]. The as-prepared thin films are subject to collisions with sputtered atoms during the deposition, which Table 1 The rf magnetron sputtering parameters for preparation of Bi 1.5 Mg 0.5 Nb 0.5 -Ti 1.5 O 7 (BMNT) thin films.…”