Reactive ion etching of Pt/PZT/Pt ferroelectric thin film capacitors in high density DECR plasma

Mace, H.; Achard, H.; Peccoud, L.

doi:10.1016/0167-9317(95)00113-1

Cited by 21 publications

(4 citation statements)

References 4 publications

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“…The work reported in the literature describing plasma etch processes developed for etching thin film layers of PZT use chlorine (Cl 2 ) or a mixture of chlorofluorocarbon (CF 4 /Cl 2 ) chemistries [13,14]. Etch rates of 300-400 Å min −1 in conventional RIE and up to 1500 Å min −1 in high-density inductively coupled plasma (ICP) have been reported.…”

Section: Plasma Etching Of Pztmentioning

confidence: 99%

Processing of PZT piezoelectric thick films on silicon for microelectromechancial systems

Beeby

Blackburn

White

1999

J. Micromech. Microeng.

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Thick-film printed lead zirconate titanate (PZT) structures can be combined with micromachined silicon structures and offer relatively large actuation forces compared to alternative techniques. This paper describes the initial investigation into the compatibility issues of micromachining silicon wafers with PZT layers printed on the surface. It assesses the effect of many standard photolithography and micromachining upon the printed PZT layer. In particular the adhesion of the printed layer to the substrate and its internal structure have been studied after exposure to each process. Standard photolithography using positive resists has been found to destroy the adhesion of the platinum electrode and an alternative masking technique using a thick-film printed dielectric polymer has been developed. Aluminium top electrodes have been fabricated using this masking technique combined with ion beam milling. Finally many standard micromachining etching processes have been carried out on a range of silicon substrates incorporating platinum electrode/thick-film PZT structures. Wet silicon and silicon dioxide etches were found to be unsuitable since they also attacked the adhesion of the bottom electrode. Plasma etching processes appear to be well suited for the combination of materials since there is a wide range of etches available that do not affect the PZT. These can therefore be used for the micromachining of the silicon substrate after thick-film processing greatly expanding the range of applications suited to this combination of technologies.

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Section: Plasma Etching Of Pztmentioning

confidence: 99%

Processing of PZT piezoelectric thick films on silicon for microelectromechancial systems

Beeby

Blackburn

White

1999

J. Micromech. Microeng.

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“…Since, the concentration of etching solution was reduced by adding water, the structure of Pb rich compounds (PbF 2 , PbCl 2 , PbFCl) formed on the surface is not easy to soluble and not easy to remove from Pt electrode surface in the case of diluted etching solutions. High melting point compounds such as TiF 3 , TiF 4 , TiCl 3 , TiCl 4 are easy to form [8]. The overall results reveal that the use of H 2 O is not appropriate.…”

Section: Resultsmentioning

confidence: 88%

Chemical Reactions During Wet-Etching Process of LSMO/PZT/LSMO-Structured Device Fabrication

et al. 2009

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Wet-etching behavior of LanthanumStrontium Manganate (LSMO) electrode and ferroelectric Pb 0.52 Zr 0.48 TiO 3 (PZT) for large area thin film using LSMO/PZT/LSMO micro-sensing device was investigated using various etching solutions. The results show that PZT and LSMO thin films can be protected by the Pt hard etching mask. The etching mechanism of PZT film was attributed to the double replacement reaction etching model. The difference of etching rates of PZT and LSMO may cause damage of upper electrodes resulting in device failure. A careful design of the mask pattern of PZT and a well control of etching time are suggested to prevent the problem.

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“…In this case, dry etching process, such as reactive ion etching (RIE), electron cyclotron resonance (ECR) plasma etching, high density ECR (DECR) plasma etching and induction coupled plasma (ICP) can be used to satisfy anisotropy. Some good results have been obtained in the literatures [5][6].…”

Section: Introductionmentioning

confidence: 81%

Inductively Coupled Plasma Etching of Pt/Ti Electrodes in Cl-Based Plasma

Zhong

Yang

Zhang

et al. 2013

AMR

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Dry etching of Pt/Ti film was carried out using Cl2/Ar plasmas in an inductively coupled plasma (ICP) reactor. The influence of the various process parameters, such as RIE power, ICP power and Cl2/Ar gas mixing ratio, on the etch rate and selectivity of photoresist to Pt/Ti film were investigated systematically and optimized. It was revealed that the etch rate and the selectivity strongly depended on the key process parameters. The etch rate was found to increase dramatically with increasing of RIE power and ICP power. But by changing the ratio of Cl2 to the total gas, the maximum etch rate could be obtained at the proper ratio of 20%. The results also indicated too low or too high RIE power and the Cl2 ratio was detrimental to the selectivity. The optimized parameters of Pt/Ti dry etching for high etch rate and low selectivity of photoresist to Pt/Ti were obtained to be pressure: 10mT, RF power: 250W, ICP power: 0W, Cl2: 8sccm (standard cubic centimeters per minute), Ar: 32sccm.

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Reactive ion etching of Pt/PZT/Pt ferroelectric thin film capacitors in high density DECR plasma

Cited by 21 publications

References 4 publications

Processing of PZT piezoelectric thick films on silicon for microelectromechancial systems

Processing of PZT piezoelectric thick films on silicon for microelectromechancial systems

Chemical Reactions During Wet-Etching Process of LSMO/PZT/LSMO-Structured Device Fabrication

Inductively Coupled Plasma Etching of Pt/Ti Electrodes in Cl-Based Plasma

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