Articles you may be interested inTime-and space-resolved electric potentials in a parallel-plate radio-frequency plasma Electron and metastable densities in parallelplate radiofrequency discharges An experimental study of a parallelplate radiofrequency discharge: Measurements of the radiation temperature and electron density Measuring the power of electromagnetic waves and their phases is a classical method for the study of microwave circuits. With new apparatus we may use this technique in the 13.56-MHz range. By computation we may derive currents, voltages, and impedances with very good accuracy. In an industrial etching system (GIR 100 made by Alcatel), we measured impedances of glow discharges in argon and SF 6 as a function of pressure and power input. We compute voltages on the powered electrode in addition to the current and power actually dissipated in the discharge. We find that the efficiency WefflW of the generator may be between 10% and 98% depending on the plasma parameters. Real and imaginary parts of impedances relate to the dissipated power and the thickness of the sheaths, respectively. Therefore, one can compare measurements to models of sheaths (collisionless or collisional sheaths) and to models of glow discharges (power dissipated in the sheath alone or dissipated in the heart of the glow). From our results we discern two types of discharges: discharges in electropositive gases like argon and discharges in very electronegative gases like SF 6' 2774
3245materials where the samples are relatively "thin" with respect to the diffusion length. To this end several separation algorithms are available for the PC technique, whereas they await future development for the SPV technique. It is shown that both techniques can lead to an agreement within 15%, if the influence of surface recombination effects is eliminated and the bulk lifetimes are compared.
ABSTRACTSemiconductor plasma processing has become an indispensable step in the manufacture of very large scale integrated circuits. This technique is however often limited by the damaging heating of a wafer loosely ]ying on the susceptor, that may occur even if the susceptor is well cooled. To overcome this problem, most industrial systems use mechanical clamping of the wafer against the susceptor with an extra gas back-side pressure. Another way to cool the wafer is based on the use of electrostatic forces. This method, known as electrostatic clamping, has not yet found a wide application field nor has it been thoroughly studied though it has several inherent interesting features. The aim of this paper is to describe the theoretical bases for electrostatic clamping as applied to a microelectronics plasma reactor and to investigate the ultimate performance that this system can achieve without inducing electrical problems. A particular emphasis is placed on electrical phenomena generated by high voltage in the process chamber which can lead to severe damage if no precautions are taken. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-08 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-08 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-03-08 to IP
The deposition of silicon dioxide by downstream microwave plasma-enhanced chemical vapor deposition (PECVD) has been investigated. A comparative study of the properties of oxide layers deposited at a pressure of 200 mtorr with two different oxidizing gases (N20 or 02) is reported. Particular emphasis is given to the influence of the substrate
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