Reaction mechanism discrimination using experimental film profiles in features

Influence of the growth temperature on the atomic distribution of TEOS deposited SiO2 films

“…Another possible explanation to the above observation is that the transition region is much thinner for TEOS deposited compared to thermally grown SiO 2 films. This is to be expected because TEOS SiO 2 films are deposited mainly through chemical reactions taking place in the gas phase 26,27 in which the contribution of the substrate is limited to the very initial stages of deposition only.…”

Step Coverage Predictions Using Combined Reactor Scale and Feature Scale Models for Blanket Tungsten LPCVD

“…There is no direct information which supports or contradicts these assumptions, for LPCVD processes. The fact that EVOLVE, a low pressure deposition package based on these assumptions (for LPCVD), predicts film profiles which are essentially identical to experimental profiles is strong indirect support for this set of assumptions [15][16][17][18][19].…”

“…Quantitative agreement between predictions and experiment can be achieved if the deposition conditions are accurately known [15,[17][18][19]. For LPCVD systems with established kinetics, disagreements between simulated and experimental film profiles are due to uncertainties in the reactant partial pressures at the wafer surface and perhaps the wafer temperature.…”

Conformality and Composition of Films Deposited at Low Pressures

“…Overall rate expressions, in which deposition (reaction) rates are expressed in terms of temperature and local species fluxes to the surface, are becoming more common. They can be based on proposed mechanisms or be used simply to represent kinetic data (2). The concept of 'sticking factor' is useful; however, it can be misleading.…”

“…(21) and Cale et al(2) to explain the characteristic conformality behavior of TEOS sourced Si0 2 . A very similar model has recently been proposed for TEOS-0 3 sourced deposition of Si0 2(22).…”