2005
DOI: 10.1116/1.2038047
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Influence of the growth temperature on the atomic distribution of TEOS deposited SiO2 films

Abstract: Articles you may be interested inRelationships among equivalent oxide thickness, nanochemistry, and nanostructure in atomic layer chemicalvapor-deposited Hf-O films on Si J. Appl. Phys. 95, 5042 (2004); 10.1063/1.1689752Atomic layer deposition of Al 2 O 3 thin films using dimethylaluminum isopropoxide and water

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Cited by 4 publications
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