Rate equations and scaling in pulsed laser deposition

Barato, Andre C.; Hinrichsen, Haye; Wolf, Dietrich E.

doi:10.1103/physreve.77.041607

Cited by 6 publications

(4 citation statements)

References 29 publications

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“…Based on the results, it was concluded that logarithmic data collapsing was accidental. Very recently, Barato, Hinrichsen, and Wolf carried out rate equation analysis on the nucleation density, and it was found that the scaling was not logarithmic in their analysis [32]. Therefore, although data appear to collapse in Fig.…”

Section: A Scaling Of Nucleation Density For Pldmentioning

confidence: 98%

Scaling in film growth by pulsed laser deposition and modulated beam deposition

Lee

2011

Phys. Rev. E

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The scalings in film growth by pulsed laser deposition (PLD) and modulated beam deposition (MBD) were investigated by Monte Carlo simulations. In PLD, an atomic pulse beam with a period t(0) were deposited instantaneously on a substrate, whereas in MBD, adatoms were deposited during a short time interval t(1) (0≤t(1)≤t(0)) within each period. If t(1)=0, MBD will be identical to PLD and, if t(1)=t(0), MBD will become usual molecular beam epitaxy (MBE). Specifically, logarithmic scaling was investigated for the nucleation density reported for PLD, and the scaling of island density was studied regarding the growth for 0

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Section: A Scaling Of Nucleation Density For Pldmentioning

confidence: 98%

Scaling in film growth by pulsed laser deposition and modulated beam deposition

Lee

2011

Phys. Rev. E

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“…5), that is, the number and size of islands are distributed differently. In addition, the islands should remind us of fractal objects in both cases and their fractal dimension can be approximately calculated within the diffusion limited aggregation (DLA) model [30]. The system equations as Eqs.…”

Section: Debris Recrystallization Process Described By Meanmentioning

confidence: 99%

“…The time evolution density quantification for such surface structures in the presence of a timedependent rate flux can be written using a system of two relatively simple equations: the total number of growing clusters, x(t) and the density of clusters of size 1 adatoms, y(t). The time-dependent equations for the x(t) (that can be considered the nucleation density, the aggregation of more than two clusters is excluded) and y(t), the system equations in dimensionless form are written as follows [21,30]:…”

Section: Debris Recrystallization Process Described By Meanmentioning

confidence: 99%

Atomic-Scale Wear in UHV: Connection Between AFM Induced-Abrasion and Debris Recrystallization

D’Acunto

2011

Tribol Lett

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Recent Ultrahigh Vacuum (UHV) scratching Atomic Force Microscopy (AFM) experiments showed the formation of regular patterns composed by small atomic clusters or mounds located around the surfaces being scanned. The formation of such structures has been theoretically reproduced and explained as, mainly produced by the flux of adatoms generated by the AFM tip stripping off adatoms during the continuous passage of the probe tip on the analysed surface. The homoepitaxy growth process on Aluminium was used for the identification of the direct connection between the adatoms flux due to wear mechanisms and the self-assembled growth processes. Such theoretical results were based on the general assumption that surface diffusion is the dominant transport mechanism of mass, and a nonequilibrium thermodynamics framework for the self-organized growth process has been developed showing evidence of the direct connection between the growth structures due to atomic debris formation and the flux of the atomic debris due to the activated wear mechanisms. In this article, we revisit the preview model giving new contributions to it and, in turn, we suggest that the improved model as proposed in this article can be supported with a new class of experiments for the quantification of the wear rates occurring for AFM probe tips in UHV conditions. In turn, a general review on activated wear mechanisms is briefly discussed.

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“…[120][121][122] However, nucleation in pulsed deposition is not as easily analyzed in the framework of rate equations as integration cannot be performed when the flux is discontinuous. [123] Instead, the general scaling behaviors of given by Eq. 8 and Eq.…”

Section: Nucleation and Island Growth In Pulsed Depositionmentioning

confidence: 99%

Nano- and mesoscale morphology evolution of metal films on weakly-interacting surfaces

Lü¹

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Thin films are structures consisting of one or several nanoscale atomic layers of material that are used to either functionalize a surface or constitute components in more complex devices.Many properties of a film are closely related to its microstructure, which allows films to be tailored to meet specific technological requirements. Atom-by-atom film growth from the vapor phase involves a multitude of atomic processes that may not be easily studied experimentally in real-time because they occur in small length-(≤ Å) and timescales (≤ ns). Therefore, different types of computer simulation methods have been developed in order to test theoretical models of thin film growth and unravel what experiments cannot show. In order to compare simulated and experimental results, the simulations must be able to model events on experimental time-scales, i.e. on the order of microseconds to seconds. This is achievable with the kinetic Monte Carlo (kMC) method.In this work, the initial growth stages of metal deposition on weakly-interacting substrates is studied using both kMC simulations as well as experiments whereby growth was monitored using in situ probes. Such film/substrate material combinations are widely encountered in technological applications including low-emissivity window coatings to parts of microelectronics components. In the first part of this work, a kMC algorithm was developed to model the growth processes of island nucleation, growth and coalescence when these are functions of deposition parameters such as the vapor deposition rate and substrate temperature.The dynamic interplay between these growth processes was studied in terms of the scaling behavior of the film thickness at the elongation transition, for both continuous and pulsed deposition fluxes, and revealed in both cases two distinct growth regimes in which coalescence is either active or frozen out during deposition. These growth regimes were subsequently confirmed in growth experiments of Ag on SiO2, again for both pulsed and continuous deposition, by measuring the percolation thickness as well as the continuous film formation thickness. However, quantitative agreement with regards to scaling exponents in the two growth regimes was not found between simulations and experiments, and this prompted the development of a method to determine the elongation transition thickness experimentally.Using this method, the elongation transition of Ag on SiO2 was measured, with scaling exponents found in much better agreement with the simulation results. Further, these measurement data also allowed the calculation of surface properties such as the terrace diffusion barrier of Ag on SiO2 and the average island coalescence rate. IIIn the second part of this thesis, pioneering work is done to develop a fully atomistic, on-lattice model which describes the growth of Ag on weakly-interacting substrates. Simulations performed using this model revealed several key atomic-scale processes occurring at the film/substrate interface and on islands which govern island...

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Rate equations and scaling in pulsed laser deposition

Cited by 6 publications

References 29 publications

Scaling in film growth by pulsed laser deposition and modulated beam deposition

Scaling in film growth by pulsed laser deposition and modulated beam deposition

Atomic-Scale Wear in UHV: Connection Between AFM Induced-Abrasion and Debris Recrystallization

Nano- and mesoscale morphology evolution of metal films on weakly-interacting surfaces

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