Rashba effect in antimony and bismuth studied by spin-resolved ARPES

Takayama, A.; Sato, Takafumi; Souma, S.; Takahashi, Takashi

doi:10.1088/1367-2630/16/5/055004

Cited by 36 publications

(27 citation statements)

References 34 publications

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“…The spin polarization of the TSS decreases from the center to the boundary of the Brillouin zone for the S x and S y , while the opposite occurs for the S z . This is generally ascribed to the superposition with bulk projected states 46 . TSS Sb thus displays the character of an emergent topologically protected state.…”

Section: Resultsmentioning

confidence: 99%

Topologization of β-antimonene on Bi2Se3 via proximity effects

Holtgrewe

Mahatha

Sheverdyaeva

et al. 2020

Sci Rep

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Topological surface states usually emerge at the boundary between a topological and a conventional insulator. Their precise physical character and spatial localization depend on the complex interplay between the chemical, structural and electronic properties of the two insulators in contact. Using a lattice-matched heterointerface of single and double bilayers of β-antimonene and bismuth selenide, we perform a comprehensive experimental and theoretical study of the chiral surface states by means of microscopy and spectroscopic measurements complemented by first-principles calculations. We demonstrate that, although β-antimonene is a trivial insulator in its free-standing form, it inherits the unique symmetry-protected spin texture from the substrate via a proximity effect that induces outward migration of the topological state. This "topologization" of β-antimonene is found to be driven by the hybridization of the bands from either side of the interface.

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Section: Resultsmentioning

confidence: 99%

Topologization of β-antimonene on Bi2Se3 via proximity effects

Holtgrewe

Mahatha

Sheverdyaeva

et al. 2020

Sci Rep

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“…[123] The electronic structure of bismuth (Z = 83) surfaces have been extensively investigated, both theoretically [84,86,87,89,97,103,125,130,134,135] and experimentally. [59,[126][127][128][129][136][137][138][139][140][141][142][143][144][145][146][147] Recently, bismuth has been shown to be a higher order topological insulator (HOTI), [129] possessing helical "hinge" states that consist of 1D gapless Kramers pairs, like the QSH edge, around specific facets of the crystal, which exists even for 3D bulk samples. As a consequence, both monolayers of Bi(111) (buckled honeycomb structure, Figure 4B) and Bi(110) (puckered honeycomb structure, Figure 4C), have been predicted to host gapless edge modes, consistent with those in a quantum spin Hall insulator, tunable by strain and electric field.…”

Section: Group Va Puckered and Buckled Honeycomb Latticesmentioning

confidence: 99%

Atomically Thin Quantum Spin Hall Insulators

et al. 2021

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Atomically thin topological materials are attracting growing attention for their potential to radically transform classical and quantum electronic device concepts. Among them is the quantum spin Hall (QSH) insulator—a 2D state of matter that arises from interplay of topological band inversion and strong spin–orbit coupling, with large tunable bulk bandgaps up to 800 meV and gapless, 1D edge states. Reviewing recent advances in materials science and engineering alongside theoretical description, the QSH materials library is surveyed with focus on the prospects for QSH‐based device applications. In particular, theoretical predictions of nontrivial superconducting pairing in the QSH state toward Majorana‐based topological quantum computing are discussed, which are the next frontier in QSH materials research.

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“…Takayama et al [97] use thin films of Sb(111) and Bi(111) on Si to study the Rashba-split surface states by spin-resolved ARPES: a reduction of the spin polarization away from the surface Brillouin zone center is observed for Sb which does not appear for Bi and indicates strong interaction with bulk states. Ultrathin Bi films on an insulating substrate permit an investigation of transport effects of the Rashba- [101] to grow organic molecules which interact very weakly with the substrate so that the surface state is also unaffected.…”

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confidence: 99%

Focus on the Rashba effect

2015

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The Rashba effect, discovered in 1959, continues to supply fertile ground for fundamental research and applications. It provided the basis for the proposal of the spin transistor by Datta and Das in 1990, which has largely inspired the broad and dynamic field of spintronics. More recent developments include new materials for the Rashba effect such as metal surfaces, interfaces and bulk materials. It has also given rise to new phenomena such as spin currents and the spin Hall effect, including its quantized version, which has led to the very active field of topological insulators. The Rashba effect plays a crucial role in yet more exotic fields of physics such as the search for Majorana fermions at semiconductorsuperconductor interfaces and the interaction of ultracold atomic Bose and Fermi gases. Advances in our understanding of Rashba-type spin-orbit couplings, both qualitatively and quantitatively, can be obtained in many different ways. This focus issue brings together the wide range of research activities on Rashba physics to further promote the development of our physical pictures and concepts in this field. The present Editorial gives a brief account on the history of the Rashba effect including material that was previously not easily accessible before summarizing the key results of the present focus issue as a guidance to the reader.

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Rashba effect in antimony and bismuth studied by spin-resolved ARPES

Cited by 36 publications

References 34 publications

Topologization of β-antimonene on Bi2Se3 via proximity effects

Topologization of β-antimonene on Bi2Se3 via proximity effects

Atomically Thin Quantum Spin Hall Insulators

Focus on the Rashba effect

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