Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The exotic band structure can lead to various novel properties, such as long-range Coulomb interaction and flat Landau levels. Recently, topological nodal lines have been observed in several bulk materials, such as PtSn4, ZrSiS, TlTaSe2 and PbTaSe2. However, in two-dimensional materials, experimental research on nodal line fermions is still lacking. Here, we report the discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si based on combined theoretical calculations and angle-resolved photoemission spectroscopy measurements. The Dirac nodal lines in Cu2Si form two concentric loops centred around the Γ point and are protected by mirror reflection symmetry. Our results establish Cu2Si as a platform to study the novel physical properties in two-dimensional Dirac materials and provide opportunities to realize high-speed low-dissipation devices.

No abstract

Photoemission, from core levels and valence band, and low-energy electron diffraction (LEED) have been employed to investigate the electronic and structural properties of novel graphene-ferromagnetic (G-FM) systems,\ud obtained by intercalation of one mono-layer (1ML) and several layers (4ML) of Co on G grown on Ir(111).\ud Upon intercalation of 1ML of Co, the Co lattice is resized to match the Ir-Ir lattice parameter, resulting in a\ud mismatched G/Co/Ir(111) system. The intercalation of further Co layers leads to a relaxation of the Co lattice\ud and a progressive formation of a commensurate G layer lying on top. We show the C 1s line shape and the band\ud structure of G in the two artificial phases, mismatched and commensurate G/Co, through a comparison with the\ud electronic structure of G grown directly on a Co thick film. Our results show that while the G valence band\ud mainly reflects the hybridization with the d states of Co, regardless of the structural phase, the C 1s line shape\ud is very sensitive to the rumpling of the G layer and the coordination of carbon atoms with the underlying Co.\ud Even in the commensurate (1x1) G/Co phase, where graphene is in register with the Co film, from the angular\ud dependence of the C 1s core level we infer the presence of a double component, due to in-equivalent adsorption\ud sites of carbon sub-lattices

Angle-resolved photoemission spectroscopy (ARPES) and ab initio band structure calculations have been used to study the detailed valence band structure of molybdenite, MoS(2) and MoSe(2). The experimental band structure obtained from ARPES has been found to be in good agreement with the theoretical calculations performed using the linear augmented plane wave (LAPW) method. In going from MoS(2) to MoSe(2), the dispersion of the valence bands decreases along both k(parallel) and k(perpendicular), revealing the increased two-dimensional character which is attributed to the increasing interlayer distance or c/a ratio in these compounds. The width of the valence band and the band gap are also found to decrease, whereas the valence band maxima shift towards the higher binding energy from MoS(2) to MoSe(2).

VS 2 is a challenging material to prepare stoichiometrically in the bulk, and the single layer has not been successfully isolated before now. Here we report the first realization of single-layer VS 2 , which we have prepared epitaxially with high quality on Au(111) in the octahedral (1T) structure. We find that we can deplete the VS 2 lattice of S by annealing in vacuum so as to create an entirely new twodimensional compound that has no bulk analogue. The transition is reversible upon annealing in an H 2 S gas atmosphere. We report the structural properties of both the stoichiometric and S-depleted compounds on the basis of low-energy electron diffraction, X-ray photoelectron spectroscopy and diffraction, and scanning tunneling microscopy experiments.

We report the discovery of a temperatureinduced phase transition between the α and β structures of antimonene. When antimony is deposited at room temperature on bismuth selenide, it forms domains of α-antimonene having different orientations with respect to the substrate. During a mild annealing, the β phase grows and prevails over the α phase, eventually forming a single domain that perfectly matches the surface lattice structure of bismuth selenide. First principles thermodynamics calculations of this van der Waals heterostructure explain the different temperature-dependent stability of the two phases and reveal a minimum energy transition path. Although the formation energies of free-standing α-and β-antimonene only slightly differ, the β phase is ultimately favoured in the annealed heterostructure due to an increased interaction with the substrate mediated by the perfect lattice match. 1 arXiv:1906.01901v1 [cond-mat.mtrl-sci]

Understanding of charge-density wave (CDW) phases is a main challenge in condensed matter due to their presence in high-Tc superconductors or transition metal dichalcogenides (TMDs). Among TMDs, the origin of the CDW in VSe2 remains highly debated. Here, by means of inelastic x-ray scattering and first-principles calculations, we show that the CDW transition is driven by the collapse at 110 K of an acoustic mode at qCDW = (2.25 0 0.7) r.l.u. The softening starts below 225 K and expands over a wide region of the Brillouin zone, identifying the electron-phonon interaction as the driving force of the CDW. This is supported by our calculations that determine a large momentum-dependence of the electron-phonon matrix-elements that peak at the CDW wave vector. Our first-principles anharmonic calculations reproduce the temperature dependence of the soft mode and the TCDW onset only when considering the out-of-plane van der Waals interactions, which reveal crucial for the melting of the CDW phase.

The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here, we report on a detailed and systematic investigation of transition metal (TM) doped Sb 2 Te 3. By combining density functional theory calculations with complementary experimental techniques, i.e., scanning tunneling microscopy, resonant photoemission, and x-ray magnetic circular dichroism, we provide a complete spectroscopic characterization of both electronic and magnetic properties. Our results reveal that the TM dopants not only affect the magnetic state of the host material, but also significantly alter the electronic structure by generating impurity-derived energy bands. Our findings demonstrate the existence of a delicate interplay between electronic and magnetic properties in TM doped topological insulators. In particular, we find that the fate of the topological surface states critically depends on the specific character of the TM impurity: while V-and Fe-doped Sb 2 Te 3 display resonant impurity states in the vicinity of the Dirac point, Cr and Mn impurities leave the energy gap unaffected. The single-ion magnetic anisotropy energy and easy axis, which control the magnetic gap opening and its stability, are also found to be strongly TM impurity dependent and can vary from in plane to out of plane depending on the impurity and its distance from the surface. Overall, our results provide general guidelines for the realization of a robust QAHE in TM doped Sb 2 Te 3 in the ferromagnetic state.