has been proposed to facilitate the electrical manipulation of magnetization switching for magnetic random access memory and magnetic logic devices by using these toques. [2][3][4][5][6] Moreover, an oscillation and precessional motion by SOT can be a candidate for various types of oscillators. [7][8][9] The spin Hall effect (SHE) and the Rashba-Edelstein interaction are expected to be the main mechanisms of the current-induced SOT, where the two main constituents are the damping-like torque and field-like torque. [10][11][12][13] In the SHE, a spin current is generated in a direction perpendicular to the applied longitudinal charge current flowing in a normal metal (NM) and accumulates spins between FM and NM layers, which exerts a damping-like torque to the magnetization in FM. [14,15] In the Rashba-Edelstein effect, which is caused by the broken space inversion symmetry at the interface, spin accumulation is generated in a direction transverse to the charge current direction in the film plane, which exerts a torque on the magnetization in a ferromagnet (FM). [16][17][18][19][20] In addition to the spin Hall and Rashba-Edelstein effects, the Oersted field generated by the current in a metallic film is an additional source of driving torque. [21,22] In a perpendicular magnetic anisotropy (PMA) structure, these torques generated from a nano-second electric pulse switch the magnetization by a domain wall motion. [23][24][25] It is known that the in-plane magnetic tunnel junction (MTJ) device by a spin transfer torque does not need an external field but takes a relatively long time for the switch due to an incubation time. [26,27] But, recently, researchers demonstrated an in-plane MTJ device by SOT showing a fast deterministic switching at a low current density. [28][29][30][31][32] This in-plane device offers various possibilities in application so that more intensive study is needed.In this work, we investigated the new aspect of in-plane SOT device depending on the amplitudes of damping-like torque, field-like torque, the Oersted field torque and demagnetization torque by a macro spin simulation. We found that the switching, oscillation, and precession could occur in the same heterostructure like W/CoFeB by using the change of the torque ratio with different NM and FM thicknesses. In addition, we constructed the dynamic map as a function of the efficiency of each torque. The expansion and the shrinkage of the switching region are reflected in the map depending on the current density.The switching of magnetization via spin-orbit torque has attracted much attention because of its fast switching and low power consumption. Numerous studies have focused on increasing the conversion efficiency from charge to spin current and out-of-plane magnetization cases. Recently, there have been reports on the fast and deterministic switching of in-plane magnetization devices. It is reported that an in-plane spin-orbit torque (SOT) device can archive the oscillation, precession, and direct switching by a combination of torques-c...