Rapid thermal processing uniformity using multivariable control of a circularly symmetric 3 zone lamp

A lamp thermoelectricity based integrated bake/chill system for photoresist processing

“…A rigorous calculation of the radiative heat transfer in the system demands the use of ray-tracing techniques [35], and entails a large programming effort as well as computing effort. Nevertheless, the present formalism has been found to yield good agreements with experimental data [32,33].…”

“…The view-factor model used here is adapted from those of Norman [26] and Lord [32] which exhibit good agreement between simulation results and experimental data [32,33]. The spectral radiosity of each surface element i is denoted as J i,k and given by…”

Analysis of Critical Parameters Affecting the Temperature Uniformity During Rapid Thermal Processing

“…This is due to the fact temperature differences as high as 300 'C across the wafer had been observed during processing in less sophisticated RTP environments. Excessive radiative and convective losses at the wafer edge compared to the center have been identified as the primary cause and studied in detail for the last couple of years [4][5][6][7]. The result is the improved design of the RTP equipments such as those with multiple heating zones, provision for slip-free ring, efficient system of reflectors etc.…”

“…The result is the improved design of the RTP equipments such as those with multiple heating zones, provision for slip-free ring, efficient system of reflectors etc. to compensate for the excessive heat loss at the wafer edge [4][5][6][7].…”

Numerical Modeling of Radiative Properties of Patterned Wafers with Sub-Micron Features

“…Dynamic control of the heating setup is one technique that has been used to reduce defects [6]. Although this is an effective method, it is commonly based on the properties measured at the center of the wafer through pyrometry, neglecting any structural or property differences away from the center.…”