When compared to furnace processing, for identical and lower substrate temperatures, more photons are available in the visible and ultraviolet regions for rapid isothermal processing (RIP) based on incoherent radiation as the energy source. In this letter, we provide experimental evidence for photoeffects in RIP for a wide variety of materials. As compared to furnace processed samples, rapid isothermal annealed phosphosilicate glass films on Si substrate show a higher value of refractive index, a lower flatband charge density, and a lower thermal stress. High-temperature superconducting thin films on Y-Ba-Cu-O deposited by RIP assisted metalorganic chemical vapor deposition on yttrium stabilized zirconia substrate show a larger grain size, a higher value of the transition temperature than their furnace counterpart. The microscopic understanding of a particular deposition or annealing process is necessary to take full advantage of photoeffects in RIP.
Rapid isothermal processing (RIP) based on incoherent radiation as the source of thermal and optical energy is emerging as a key low-thermal budget processing technique. Because of high heating and cooling rates, the RIP cycle generally refers to processing time and temperature. In this letter, we have shown that the properties of materials and devices fabricated by RIP depends on the heating and cooling rates. Optimized heating and cooling rates can minimize unwanted phenomena (e.g., higher thermal stress, warpage, etc.) leading to the improved performance of the devices fabricated by RIP. To demonstrate this significance of heating and cooling rates, we report the wafer dimensional analysis results for ramp rates of 15, 75, 100, 150, and 200 °C per second at a maximum steady-state temperature of 1050 °C. Plasma and low-pressure chemical vapor deposition silicon nitride films on 6-in. wafers were studied for warpage. The BF2 and As implanted wafers at a fixed dose of 8×1015/cm2 were studied for slow (15 °C per second) and fast (200 °C per second) ramp rates. We also present stress, secondary ion mass spectroscopy, and diode leakage current results for different RIP cycles of interest.
Effect of wafer bow on electrostatic chucking and back side gas cooling Estimation of wafer warpage profile during thermal processing in microlithography Rev. Sci. Instrum. 76, 075111 (2005); 10.1063/1.1979468 Modeling of direct wafer bonding: Effect of wafer bow and etch patterns
The growth and advancement of the electronic and photonic industry in the 21 st century hinges on revolutionary new processing techniques that will overcome some of the most fundamental limitations of conventional methods. Rapid isothermal processing (RIP) based on incoherent radiation as the source of optical and thermal energy can play a major role in designing processing systems that offer the tight process control, low thermal budgets, low microscopic defects, high throughput and high yields required for almost every semiconductor device. Conventional RIP can be further optimized by fully exploiting the contribution of quantum photoeffects. The improved performance and reliability offered by RIP will make it the mainstream technology for the green manufacture of microelectronics, optoelectronics, solar cells, flat panel displays and microelectromechanical systems. Key issues related to the cost of ownership, design of RIP system based on the full utilization of photo–thermal effects and model based control systems are described. New experimental results for a number of processing steps are provided. These results demonstrate the importance of advanced RIP systems in providing better performance and lower defects for future devices.
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