Rapid thermal annealing of graphene-metal contact

Balcı, Osman; Kocabaş, Coşkun

doi:10.1063/1.4769817

Cited by 81 publications

(76 citation statements)

References 24 publications

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“…Using these data together with a simple equivalent circuit model, both the sheet as well as the contact resistances can be obtained for all 4 different operational conditions of the transistor, in an all non-invasive fashion (details are given in the SI section). The values obtained are consistent with our previous electrical-only measurements, [29] and also with reported ones. It must also be stressed that extracted values of the transistor using XPS, as given in Table 1, differs from those depicted in Fig.…”

Section: Resultssupporting

confidence: 82%

Monitoring the operation of a graphene transistor in an integrated circuit by XPS

Aydogan

Balcı

Kocabaş

et al. 2016

Organic Electronics

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a b s t r a c tOne of the transistors in an integrated circuit fabricated with graphene as the current controlling element, is investigated during its operation, using a chemical tool, XPS. Shifts in the binding energy of C1s are used to map out electrical potential variations, and compute sheet resistance of the graphene layer, as well as the contact resistances between the metal electrodes. Measured shifts depend on lateral positions probed, as well as on polarity and magnitude of the gate-voltage. This non-contact and chemically specific characterization can be pivotal in diagnoses.

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Section: Resultssupporting

confidence: 82%

Monitoring the operation of a graphene transistor in an integrated circuit by XPS

Aydogan

Balcı

Kocabaş

et al. 2016

Organic Electronics

Self Cite

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“…For example, various kinds of metals, such as titanium [2], palladium [3], nickel [4], cobalt [5], chromium [6], and gold [7] have been used to contact graphene, aiming to transfer more charges into graphene and to increase its carrier density. On the other hand, various methods for interface modification, such as oxygen plasma treatment [8][9][10], rapid thermal annealing [11], and graphene contact area patterning [12] have been demonstrated to reduce graphene/metal contact resistance by increasing the carrier density of graphene or the carrier injection area/length. Values of R c obtained from all these studies ranges from hundreds to thousands Ω·μm, and the lowest metal/graphene contact resistance reported at room temperature is approximately 100 Ω·μm with a Cu contact and a Augrain contact [12,13].…”

Section: Introductionmentioning

confidence: 99%

Realization of low contact resistance close to theoretical limit in graphene transistors

et al. 2015

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Realizing low contact resistance between graphene and metal electrodes remains a well-known challenge for building high-performance graphene devices. In this work, we attempt to reduce the contact resistance in graphene transistors and further explore the resistance limit between graphene and metal contacts. The Pd/graphene contact resistance at room temperature is reduced below the 100 Ω·μm level both on mechanically exfoliated and chemical-vapor-deposition graphene by adopting high-purity palladium and high-quality graphene and controlling the fabrication process to not contaminate the interface. After excluding the parasitic series resistances from the measurement system and electrodes, the retrieved contact resistance is shown to be systematically and statistically less than 100 Ω·μm, with a minimum value of 69 Ω·μm, which is very close to the theoretical limit. Furthermore, the contact resistance shows no clear dependence on temperature in the range of 77-300 K; this is attributed to the saturation of carrier injection efficiency between graphene and Pd owing to the high quality of the graphene samples used, which have a sufficiently long carrier mean-free-path.

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“…Raman examination of the blue shift reveals a decrease in full width at half maximum (FWHM) in the G band on the SLG channel, which indicates that the hole doping increases after FGA, leading to the Dirac point shifting toward high positive voltage [63]. A low temperature rapid thermal annealing (RTA) is proposed to eliminate process-induced resistance [64], while RTA at high temperature will degrade the performance of the device. …”

Section: Annealing Effect On Contact Junctionmentioning

confidence: 99%