A Study on Graphene—Metal Contact

Liu, Wenjun; Wei, Jun; Sun, Xiao Wei; Yu, Hongyu

doi:10.3390/cryst3010257

Cited by 65 publications

(50 citation statements)

References 81 publications

(109 reference statements)

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“…After metal sputtering, the appearance of few spectral features in the spectral range below 1500 cm -1 (in the range of 1300-1400 cm -1 ) and at the same time an increase in the band width of G-band can be attributed to the introduction of defects sites due to the sputtering. Liu et al observed similar behavior, when the researchers deposited Aluminum (Al) by means of sputtering technique [36]. It is plausible that silver atoms, in our case, during the sputtering process retain high kinetic energy, transferred to the graphene sheet.…”

Section: Resultssupporting

confidence: 53%

Graphene: A Building Foundation for Efficient Plasmonic SERS Device

Das¹,

Moretti²,

Torre³

et al. 2017

Biochem Anal Biochem

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In this paper graphene over SiO 2 /Si substrate was used as a building base to fabricate SERS device. A thin film of silver was deposited over graphene and annealed at 250°C. The substrate was examined after chemisorption of two molecules; rhodamine 6G which is a fluorescent dye, and 3-mercaptobenzoic acid, a thiol molecule. SERS enhancement factor for the proposed device is estimated to be 2.1 × 10 6 with respect to the flat silver substrate deposited over Si. The experimental results were compared in two ways: a) by using electromagnetic field calculation and b) quantum mechanical calculation derived from density function theory. The experimental findings were consistent with the theoretical observations.

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Section: Resultssupporting

confidence: 53%

Graphene: A Building Foundation for Efficient Plasmonic SERS Device

Das¹,

Moretti²,

Torre³

et al. 2017

Biochem Anal Biochem

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“…We find that gently [5][6][7][8][9]. We distinguish the role of air adsorbates and process residues on the doping of the graphene channel from that of the supporting SiO2 and argue that strain of graphene under the contacts plays an important role in increasing the contact resistance.…”

Section: Introductionmentioning

confidence: 95%

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics

et al. 2015

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We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10 -4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.

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“…This work function value is similar to both silver (4.4 eV) and eGaIn (4.1-4.2 eV), and is therefore promising for achieving low interfacial resistance, which is a key property for many applications. [36][37][38] The contact resistance for the graphene-eGaIn junction is measured by the transmission line method, shown in Figure 3a. [39] This method is also used to measure contact resistance for different material sets, as shown in Figure 3b and Figure S10 (Supporting Information).…”

mentioning

confidence: 99%

Wiring up Liquid Metal: Stable and Robust Electrical Contacts Enabled by Printable Graphene Inks

Secor

Cook

Tabor

et al. 2017

Adv Elect Materials

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electronic materials. By leveraging these unique characteristics, researchers have recently demonstrated advances in reconfigurable, responsive, and stretchable electronic devices. [5][6][7][8] Select applications of liquid metals include soft electronic skins, [9,10] dynamic and flexible antennas, [11][12][13][14] and self-healing and elastic electronics. [15,16] Moreover, the fluid nature of GaLMAs such as eutectic gallium-indium (eGaIn) enables broad process compatibility with additive printing methods such as direct write, inkjet, transfer, and 3D printing. [17][18][19][20][21][22][23] As such, research toward the control and integration of GaLMAs for printed, stretchable, and reconfigurable electronics has attracted broad scientific and practical interest.Despite their promise, the development of liquid metal electronics must overcome several challenges for widespread application. In particular, stable electrical contacts have been identified as a critical challenge for the integration of GaLMAs in electronic circuits and systems. [4] Since gallium alloys rapidly with most metals, GaLMAs lead to unstable or mechanically sensitive interfaces when combined with metal electrodes or interconnects, thereby preventing the reliable integration of eGaIn functionality with conventional electronics. In a recent dramatic demonstration of this effect, Dickey and coworkers exploited the aggressive alloying of eGaIn with silver to direct the motion of liquid metal droplets across a surface, completely removing the silver in the process. [24] Therefore, to enable broader application of eGaIn with conventional circuits, interfacial alloying needs to be suppressed without compromising electrical or mechanical properties.Here, we demonstrate printed graphene as a reliable and high-performance interfacial layer to enable electrical connections to eGaIn. In contrast to conventional metals, sp 2 -bonded carbon materials are stable to alloy formation with liquid metals. [25,26] To leverage this property in a platform that is suitable for printed GaLMAs, graphene inks based on cellulose derivatives are used for robust contacts to liquid metal. This class of graphene inks has shown broad process compatibility with excellent electrical conductivity, mechanical durability, and environmental stability. [27][28][29][30] A thin film (≈100 nm) of fewlayer graphene flakes printed between conventional silver leads and eGaIn acts as a physical barrier, effectively passivating the surface against alloying while retaining the ability to conduct current across the interface. Moreover, graphene interfacial Gallium-based liquid metal alloys (GaLMAs) are a unique class of advanced materials with the potential to offer unprecedented opportunities in stretchable and reconfigurable electronics. Despite their promise, the development of liquid metal electronics must overcome several challenges for widespread application. In particular, stable electrical contacts have been identified as a critical challenge for the integration of GaLMAs in electronic...

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A Study on Graphene—Metal Contact

Cited by 65 publications

References 81 publications

Graphene: A Building Foundation for Efficient Plasmonic SERS Device

Graphene: A Building Foundation for Efficient Plasmonic SERS Device

Graphene field effect transistors with niobium contacts and asymmetric transfer characteristics

Wiring up Liquid Metal: Stable and Robust Electrical Contacts Enabled by Printable Graphene Inks

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