Rapid thermal annealing of arsenic and boron-implanted silicon

Narayan, J.; Holland, O. W.; Eby, R.E.; Wortman, J. J.; Ozguz, V.; Rozgonyi, G. A.

doi:10.1063/1.94200

Cited by 83 publications

(20 citation statements)

References 5 publications

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“…40 In the case of the supercooled semiconductive liquid, the lowest heating rate for appearance is inferred indirectly to be 10-10 2 from transient enhanced diffusion in ion-implanted a-Si. 37,38,41 Whether the supercooled semiconductive liquid states exist or not is an interesting subject in a-Si, so we apply the fragmentation model to a-Si in order to know the conditions of appearance of the supercooled semiconductive liquid.…”

Section: Discussionmentioning

confidence: 99%

Model for the glass transition in amorphous solids based on fragmentation

1996

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A model for the glass transition in a heating process has been proposed. In the model, noncrystalline solids are assumed to be assemblies of pseudomolecules or structural units. When the noncrystalline solid is heated, a bond breaking process becomes dominant compared with a rebinding process of broken bonds. At high temperature, successive bond breaking causes the fragmentation of the solid and the fragment size becomes smaller as the temperature further increases. Consequently, the solid begins to show some viscous behavior when the fragment size reaches a critical value. To construct mathematical expressions for the fragmentation model, we employed a simple rate equation for the bond breaking process first and then obtained the temperature dependence of dangling bond density in a noncrystalline solid. Second, the expressions for the fragment density and size as a function of temperature were obtained based on the following assumptions: ͑1͒ bond breaking takes place mainly at the boundaries between pseudomolecules, ͑2͒ once buds of microcracks are generated, successive bond breaking occurs mostly at the tip of the microcracks, and ͑3͒ the fragments are Voronoy polyhedra. Finally, the diffusion coefficient in the system was obtained by assuming the vacancy mechanism in solids and then the temperature dependence of viscosity was derived through Stokes-Einstein relation. To examine the present model, applications of the model to the phase changes of a-Si in heating processes are carried out and the results were discussed.

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Section: Discussionmentioning

confidence: 99%

Model for the glass transition in amorphous solids based on fragmentation

1996

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“…It has also been reported that an ll00~ RIA cycle would be sufficient for the dopant activation of shallow junctions (10). Furthermore, experiments conducted in our laboratories and elsewhere (19) have shown that wafer warpage induced by RIA cycles of up to 1100~ is negligible; in some cases, wafer flatness is even improved.…”

Section: Phosphorus Out-diffusion--some Loss Of Phosphorus From the mentioning

confidence: 93%

“…This was Paper 420 presented at the New Orleans, Louisiana, Meeting of the Society, Oct. [7][8][9][10][11][12] 1984.…”

Section: Acknowledgmentsmentioning

confidence: 99%

“…The amount of dopant diffusion induced by RIF in underlying device junction areas will largely determine its range of usefulness for VLSI applications (6)(7)(8)(9)(10)(11)(12) fore, boron-implanted silicon wafers were also processed separately and junction depths were measured after undergoing typical RIF cycles. Finally, fusion and dopant redistribution experiments were carried out in a conventional furnace and the results were compared with the RIF data to assess the relative applicability of each technique to VLSI processing.…”

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confidence: 99%

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Rapid Isothermal Fusion of PSG Films

Mercier

Colder

Beerkens

et al. 1985

J. Electrochem. Soc.

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This paper presents results on rapid isothermal fusion (RIF) characteristics of phosphosilicate glass (PSG) obtained using an incoherent lamp annealer in a N2 ambient. The effects of varying the temperature (10007-1200~ the cycle duration (10-60s), and the phosphorus concentration in the glass (2.5-8.0 w/o) were investigated. The out-diffusion of phosphorus from the PSG films during RIF cycles were also studied. In conjunction with these experiments, dopant redistribution induced by typical RIF cycles in a boron-implanted silicon substrate was measured to assess the practicality of the RIF technique for VLSI applications and to identify a process window. The results for the boron profile redistribution were used as a basis of comparison between RIF and conventional furnace treatments. Although restricted to VLSI applications where a relatively high phosphorus content of approximately 8 w/o is acceptable in PSG films, it is concluded that RIF in a N~ ambient is nevertheless much more effective for the fusion of PSG films than conventional furnace processing and thus much more compatible with VLSI processing.As a part of the fabrication sequence for integrated circuits, a layer of phosphosilicate glass (PSG) is deposited to provide passivation and electrical insulation between metal interconnects and underlying structures. Before the subsequent deposition of metal takes place, it is necessary to smooth the surface topography to ensure continuity of the overlying metallization. At present, this treatment is typically a furnace glass fusion cycle at 1000~ for 30 min or more (1-5) and is the last high temperature process step in the fabrication of LSIC's. This heavy thermal load will be unacceptable for processing new generations of VLSI circuits because it will induce appreciative lateral and vertical dopant redistribution in small geometry devices.Thermal processing requirements can be eased by using different materials or ambients during the fusion cycle. Although increasing the phosphorus concentration does lead to a lower fusion temperature for PSG films, excessive concentrations eventually promote the formation of phosphoric acid in the presence of moisture (2, 4), thereby causing reliability problems due to corrosion of overlying aluminum interconnect lines. As an alternative solution, rapid isothermal fusion (RIF) has been shown in limited studies to improve PSG step coverage, while causing less junction diffusion than conventional furnace processing cycles because of its lower time-temperature product (6-9).In this work, we have studied the effect of RIF on PSG films having a practical range of phosphorus concentrations, namely, 2.5, 4.0, 6.6, and 8.0 w/o. The RIF experiments were performed in a N.2 ambient using a tungsten halogen lamp system. :~ In addition, the out-diffusion of phosphorus from the PSG films during RIF was examined.The amount of dopant diffusion induced by RIF in underlying device junction areas will largely determine its range of usefulness for VLSI applications (6-12). There-* Electrochem...

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“…During implantation the implanted dopants are bombarded into the silicon, and this process produces point defects within the lattice. These defects are in the form of Si self-interstitials, created when the ions collide with the Si atoms which then are displaced from their equilibrium positions [2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells

Boo

Lee

Kang

et al. 2012

International Journal of Photoenergy

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P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘Cfor 30∼90 min for activation. Boron emitters were activated at1000∘Cor higher, while phosphorus emitters were activated at950∘C. QSSPC measurements show that the impliedVocof boron emitters increases about 15 mV and theJ01decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the impliedVocdecreases from 622 mV to 560 mV and theJ01increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178 μs to 14 μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δηabs=−1.3%), while, for n-type implanted solar cells, deep junction annealing increases the efficiency andVoc, especially (Δηabs=+0.4%) for backside emitter solar cells.

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Rapid thermal annealing of arsenic and boron-implanted silicon

Cited by 83 publications

References 5 publications

Model for the glass transition in amorphous solids based on fragmentation

Model for the glass transition in amorphous solids based on fragmentation

Rapid Isothermal Fusion of PSG Films

Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells

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