P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘Cfor 30∼90 min for activation. Boron emitters were activated at1000∘Cor higher, while phosphorus emitters were activated at950∘C. QSSPC measurements show that the impliedVocof boron emitters increases about 15 mV and theJ01decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the impliedVocdecreases from 622 mV to 560 mV and theJ01increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178 μs to 14 μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δηabs=−1.3%), while, for n-type implanted solar cells, deep junction annealing increases the efficiency andVoc, especially (Δηabs=+0.4%) for backside emitter solar cells.
We performed two-dimensional technology computer-aided design simulations for interdigitated back contact (IBC) solar cells with rear trench structures (TS), denoted here as TS-IBC solar cells. First, we calculated a reference simulation model for conventional IBC solar cells. We then assumed a trench structure at the rear surface of the IBC solar cell. For this structure, we analyzed solar cell performance as a function of various trench depths and type. It was found that emitter trench formation affects minority carrier collection, such that the short-circuit current density increases with increasing trench depth. However, the back-surface field (BSF) trench exhibited poor minority carrier collection, which reduced the conversion efficiency of the TS-IBC solar cells. It was also found that for the same trench depth (30 μm), the difference in conversion efficiencies of an IBC solar cell with an emitter trench and that with a BSF trench was 0.6%. We are thus convinced that the emitter trench structure is more important than the BSF trench structure.
Augmented reality (AR) devices, as smart glasses, enable users to see both the real world and virtual images simultaneously, contributing to an immersive experience in interactions and visualization. Recently, to reduce the size and weight of smart glasses, waveguides incorporating holographic optical elements in the form of advanced grating structures have been utilized to provide light-weight solutions instead of bulky helmet-type headsets. However current waveguide displays often have limited display resolution, efficiency and field-of-view, with complex multi-step fabrication processes of lower yield. In addition, current AR displays often have vergence-accommodation conflict in the augmented and virtual images, resulting in focusing-visual fatigue and eye strain. Here we report metasurface optical elements designed and experimentally implemented as a platform solution to overcome these limitations. Through careful dispersion control in the excited propagation and diffraction modes, we design and implement our high-resolution full-color prototype, via the combination of analytical–numerical simulations, nanofabrication and device measurements. With the metasurface control of the light propagation, our prototype device achieves a 1080-pixel resolution, a field-of-view more than 40°, an overall input–output efficiency more than 1%, and addresses the vergence-accommodation conflict through our focal-free implementation. Furthermore, our AR waveguide is achieved in a single metasurface-waveguide layer, aiding the scalability and process yield control.
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