Simulation of interdigitated back contact solar cell with trench structure

Abstract

We performed two-dimensional technology computer-aided design simulations for interdigitated back contact (IBC) solar cells with rear trench structures (TS), denoted here as TS-IBC solar cells. First, we calculated a reference simulation model for conventional IBC solar cells. We then assumed a trench structure at the rear surface of the IBC solar cell. For this structure, we analyzed solar cell performance as a function of various trench depths and type. It was found that emitter trench formation affects minority carrier collection, such that the short-circuit current density increases with increasing trench depth. However, the back-surface field (BSF) trench exhibited poor minority carrier collection, which reduced the conversion efficiency of the TS-IBC solar cells. It was also found that for the same trench depth (30 μm), the difference in conversion efficiencies of an IBC solar cell with an emitter trench and that with a BSF trench was 0.6%. We are thus convinced that the emitter trench structure is more important than the BSF trench structure.

Finding 10% hidden electricity in crystalline Si solar cells using PDMS coating and three‐dimensional cell arrays

“…Over the past few decades, the crystalline silicon (Si) solar cell industry has matured and photovoltaics is now considered a key aspect of renewable energy production. 1,2 This development has led to the continuous improvement of crystalline Si solar cells from back surface field structures (BSF) to passivated emitter and rear contact (PERC), [3][4][5] tunneling oxide passivated contact (TOPCon), [6][7][8][9] interdigitated back contact (IBC), [10][11][12][13] and heterojunction intrinsic thin layer (HIT) solar cells [14][15][16] as well as enhanced light trapping structures such as surface texturing 1,2,17,18 and cello structured grids. 19 With this development, the efficiency of crystalline Si solar cells has been increased to 26.7% at the lab-scale by HIT-IBC cells.…”

Mathematical modelling of a novel heterojunction SIS front surface and interdigitated back-contact solar cell

“…Further the effect of BCI finger width was studied on solar cell performance. Finger width optimization has always been a important factor to IBC solar cell performance [4][5]. We have tried to find an amicable solution to optimize the finger width in this mathematical modelling.…”

“…Thickness dbulk = 300 μm [6] carrier concentration NDcSi = 2 × 10 16 cm -3 [12] Energy band gap EgcSi = 1.12 eV [13] Electron affinity χcSi = 4.05 eV [13] Relative permittivity εcSi = 11.9 [13] Effective density of state conduction band edge NCcSi = 2.82 × 10 19 cm -3 [13] Effective density of state valance band edge NVcSi = 1.83 × 10 19 cm -3 [13] Drift mobility of electron μncSi = 1400 cm 2 /Vs [13] Drift mobility of hole μpcSi = 480 cm 2 /Vs [13] Best carrier lifetime τbulk = 2000μs [14] Overall IBC solar cell Area = 1 cm 2 Font surface texture pyramid height = 3 μm [5] Front surface recombination velocity (FSRV) SF = 500 cm/s [6] Back surface recombination velocity (BSRV) SB = 500 cm/s [6] contact resistance 0.1 Ω/cm 2 [3] Here we have considered some ideal conditions which have negligible effects on the actual values. These are listed below.…”

Omni-directional light capture in PERC solar cells enhanced by stamping hierarchical structured silicone encapsulation that mimics leaf epidermis

“…Crystalline silicon (Si) solar cells are the dominant photovoltaic technology, and developments in recent years include back surface eld (BSF) cells, bifacial solar cells that incorporate a heterojunction with intrinsic thin layer (HIT), passivated emitter and rear cell (PERC) technology, and interdigitated back-contact (IBC) solar cells. [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] Despite the continuous development of crystalline Si solar cells, the design of Si solar cell modules has changed very little in recent decades. 16,17 The limitations of current module technologies are reported regularly; it is our opinion that new crystalline Si solar cell modules could be designed with enhanced energy conversion efficiency and improved reliability in the eld.…”