Rapid optical thermal processing of silicon solar cells

Schindler, R.; Reis, I.; Wagner, B.; Eyer, A.; Lautenschlager, H.; Schetter, C.; Warta, Wilhelm; Hartiti, Bouchaíb; Slaoui, A.; Müller, Jean-Claude; Siffert, P.

doi:10.1109/pvsc.1993.347060

Cited by 8 publications

(2 citation statements)

References 5 publications

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“…Alternatively, the silicon dioxide films can be formed at low temperatures by rapid thermal oxidation (RTO), [14][15][16][17][18] plasma enhanced chemical vapour deposition (PECVD), [19][20][21][22] atomic-layer deposition (ALD), [23][24][25][26][27] atmospheric pressure chemical vapour deposition (APCVD), 22,28,29 nitric acid oxidation of silicon (NAOS), [30][31][32][33] and anodic oxidation. [34][35][36][37][38][39] The advantages and disadvantages of these different methods were discussed by Grant 40 who recently reported surface recombination velocities of less than 40 cm/s on silicon wafers passivated with silicon dioxide layers that were electrochemically grown in nitric acid at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Light-induced anodisation of silicon for solar cell passivation

Cui

Wang

Opila

et al. 2013

Journal of Applied Physics

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Effect of self-orderly textured back reflectors on light trapping in thin-film microcrystalline silicon solar cellsHigh open-circuit voltage values on fine-grained thin-film polysilicon solar cells This paper reports a new method for forming anodic oxides on silicon surfaces using the lightinduced current of pn-junction solar cells to make p-type silicon surfaces anodic. The light-induced anodisation process enables anodic oxide layers as thick as 79 nm to be formed at room temperature in a faster, more uniform, and controllable manner compared to previously reported clip-based anodisation methods. Although the effective minority carrier lifetime decreased immediately after light-induced anodisation from initial values measured with an 17 nm thermally grown oxide on both wafer surfaces, the 1-sun implied open circuit voltage of wafers on which the thermally grown oxide on the p-type surface was replaced by an anodic oxide of the same thickness could be returned to its initial value of $635 mV (for 3-5 X-cm Cz silicon wafers) after a 400 C anneal in oxygen and then forming gas. The passivation of the formed anodic oxide layers was stable for a period of 50 days providing the oxide was protected by a 75 nm thick silicon nitride capping layer. V C 2013 AIP Publishing LLC. [http://dx.

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Section: Introductionmentioning

confidence: 99%

Light-induced anodisation of silicon for solar cell passivation

Cui

Wang

Opila

et al. 2013

Journal of Applied Physics

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“…The cycle time can be reduced during production with RTP by replacing furnace processes such as thermal diffusion and low-pressure chemical vapor deposition. [18][19][20] Even though RTP is an indispensable technology for the device scaling and fabrication cost reduction, it is also reported that RTP causes interface state generation. [21][22][23][24][25] A flat-band voltage shift by the generated interface states 21) leads to a MOSFET threshold voltage shift.…”

Section: Introductionmentioning

confidence: 99%

Study of oxide-silicon interface state generation and annihilation by rapid thermal processing

Kurachi¹,

Takano²,

Kanie

2015

Jpn. J. Appl. Phys.

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We report the effects of varying the oxygen partial pressure (OPP) on the structural and electronic properties of SiO x /Si heterolayers grown by RF reactive sputtering. The produced samples present silicon poly-crystalline characteristics for low values of OPP. The crystallinity decreases as the OPP increases due to oxygen interdiffusion until the silicon crystal structure becomes amorphous. The results of infrared and Raman spectroscopies show higher deviation from stoichiometry and an increment of structural disorder for samples grown with higher values of OPP. Room temperature photoluminescence (PL) is present in all as-grown samples. The PL spectra show two bands, around 1.87 and 2.16 eV, for all the samples, while a third broad band at lower energy shows up and shifts to the red as OPP increases. Our results indicate that silicon-related room temperature PL emission is correlated with the stoichiometry of the SiO x and to the formation of silicon crystals embedded in a silicon dioxide matrix.

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Towards high‐eficiency silicon solar cells by rapid thermal processing

Hartiti

Schindler

Slaoui

et al. 1994

Progress in Photovoltaics

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Rapid thermal processing can offer many advantages, such as small overall thermal budget and low power and time consumption, in a strategy focused on cost‐effective techniques for the preparation of solar cells in a continuous way. We show here that this very short duration (a few tens of seconds) of isothermal heating performed in a lamp furnace can be used for many thermal steps of silicon solar cell processing. Rapid thermal processing was applied to form the p‐n junction from a phosphorus‐doped spin‐on silica film deposted on (100) silicon substrates at typical processing temperatures between 800 and 1100°C. the solar cells showed conversion efficiencies as good as those processed in a conventional way.

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Rapid optical thermal processing of silicon solar cells

Cited by 8 publications

References 5 publications

Light-induced anodisation of silicon for solar cell passivation

Light-induced anodisation of silicon for solar cell passivation

Study of oxide-silicon interface state generation and annihilation by rapid thermal processing

Towards high‐eficiency silicon solar cells by rapid thermal processing

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