Rapid annealing of titanium silicide using a graphite strip heater

Jones, Reese E.; Li, B. Z.; Daneshvar, K.; Davis, J.G.

doi:10.1063/1.333896

Cited by 9 publications

(1 citation statement)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In the case of WSi2 (50), a resistivity decrease of two to three times over that achieved by furnace annealing (51) was reported for equivalent B diffusion in the underlying device. Limited dopant diffusion (52) and interface reaction (53) were observed in sputter-deposited Ti-Si or cosputtered TiSi2 formed on poly-Si or on Si (100) substrates (54,55); also, the sheet resistance variation across the wafers is smaller for RTA than for furnace annealing (56).…”

Section: July 1986mentioning

confidence: 99%

Self‐Aligned Ti Silicide Formed by Rapid Thermal Annealing

Brat

Osburn

Finstad

et al. 1986

J. Electrochem. Soc.

View full text Add to dashboard Cite

Different aspects of the reaction between Ti and single‐crystal (100) Si are reported when the reaction is thermally activated by rapid thermal annealing. The sheet resistance variation of the TiSix film was measured for a wide range of annealing temperatures, from 400° to 1100°C, in two different atmospheres of high purity Ar and N2 gas, for bare and As‐implanted Si. At temperatures ⩾800°C, the only silicide formed was TiSi2 . Both cross‐sectional TEM and RBS results indicate that the amount of titanium consumed in the reaction depends strongly on the atmosphere used for silicidation. Argon makes possible the reaction of almost the whole Ti layer with silicon, while nitrogen leaves an unreacted layer of about 15 nm, independent of the thickness of the original film. A two‐step anneal is necessary to eliminate bridging in a patterned oxide structure. No difference was observed in the roughness of the external surface whether the samples were annealed in Ar or in N2 . No significant enhanced diffusion of As into Si was observed near the normalSi/TiSi2 interface after RTA in an Ar ambient, while a redistribution of As into the silicide takes place. The As piles up at the TiSi2 surface, from which it evaporates at high temperatures. Results of furnace‐annealed samples in N2 atmosphere show a pile‐up of As at the normalSi/TiSi2 and the TiSi2/normalambient atmosphere interfaces, where it evaporates from the latter, at high temperatures.

show abstract