The electrical transport properties of cosputtered tungsten silicide films were investigated. The microstructure of the annealed film was determined by x-ray diffraction. Both resistivity and Hall coefficients for the WSi2 films were measured in the temperature range 80–300 K. The current carriers in tungsten disilicide were found to be positive holes. The carrier concentration determined from this experiment is ∼1×1022 cm−3 which does not change with either annealing process or measuring temperature. The resistivity of the WSi2 film in the measured temperature range increases approximately linearly with temperature. The carrier mobility and its temperature dependence were also studied.
Titanium silicide films cosputtered on a polycrystalline silicon layer over a thermally oxidized silicon wafer were rapidly annealed at various temperatures and times using a graphite strip heater. Sheet resistances comparable with those of furnace annealed samples were obtained using 45-sec anneals at 1000–1200 °C. X-ray diffraction revealed only the formation of a TiSi2 phase, but Rutherford backscattering showed that the amount of excess silicon beyond stoichiometric TiSi2 increased with increasing anneal temperature. Significant increases in the infrared reflectivity spectrum were observed upon annealing which suggests that front side annealing may result in better thermal uniformity across a wafer.
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