2015
DOI: 10.1016/j.commatsci.2015.01.037
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Random vacancy effect on the electronic transport of zigzag graphene nanoribbon using recursive Green’s function

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Cited by 12 publications
(6 citation statements)
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“…All these results support the perturbation of the defect state at rGO surface through the electrochemical reduction and oxidation, as expected . According to the previous study, this small amount of defects at the material could induce a significant change in the conductance and the resultant charge-transfer resistance at rGO microsheets …”
Section: Resultssupporting
confidence: 89%
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“…All these results support the perturbation of the defect state at rGO surface through the electrochemical reduction and oxidation, as expected . According to the previous study, this small amount of defects at the material could induce a significant change in the conductance and the resultant charge-transfer resistance at rGO microsheets …”
Section: Resultssupporting
confidence: 89%
“…Despite the challenge to reveal the meaning of the constant, this exponential decay indicates the change of electron movement through the middle paths when they reach these defects. 27 After the electrochemical oxidation of rGO microsheets for 5 and 10 min, more redox-induced defects are formed as supported by the gradual increase of I D /I G in Raman spectroscopy (Figure S4, Supporting Information). Using the perturbation ECL at the microsheets, higher ECL intensities are observed with longer electro-oxidation time (Figure S5, Supporting Information), which is ascribed to more defects at the surface accelerating the production of oxygen radicals.…”
Section: Acs Applied Materials and Interfacesmentioning
confidence: 84%
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“…They can induce localized states and sharp resonant states at Fermi energy 27 , which acts as scattering centers for electrons and remarkably reduces the electrical conductivity of graphene [28][29][30][31][32][33] . The conductance decreases as the defect concentration increases due to more resonant states in the transport spectrum 34,35 . However, such a suppression seems to be weakened at the charge neutrality point, leading to a minimum conductivity of 4e 2 /πh even for higher defect concentrations 36 .…”
Section: Introductionmentioning
confidence: 99%