Random Telegraph Signal and Flicker Noise In CMOS Image Sensor using Column Source Follower Readout Circuits

Kohara, Takahiro; Lee, W.; Mizobuchi, Koichi; Sugawa, Shigetoshi

doi:10.7567/ssdm.2009.d-7-4

Cited by 2 publications

(1 citation statement)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, CMOS image sensors with a lateral overflow integration capacitor (LOFIC) in a pixel have been proposed and solved the tradeoff between the sensitivity and the full well capacity (FWC) in one exposure. 5,6) The LOFIC technology not only reduces the input-referred noise by improving the photo-electric conversion gain (CG) in the pixel but also obtains the high saturation performance. It has been pointed out that the remaining noise was also generated by the column readout circuits in this image sensor.…”

Section: Introductionmentioning

confidence: 99%

A Complementary Metal–Oxide–Semiconductor Image Sensor with 2.0 e^- Random Noise and 110 ke^- Full Well Capacity and Noise Measurement of Pixel Transistors Using Column Source Follower Readout Circuits

Kohara

Lee

Mizobuchi

et al. 2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We have used a pulse-injection method to fix multi-walled carbon nanotubes (MWNTs) onto hydrogen-terminated Si(100) surfaces. Using scanning-tunneling-microscopy (STM), we first tested several kinds of solvents for organic molecules which were pulse-injected onto the H-terminated Si(100) surfaces. Most of the solvent molecules of hexane and chloroform were desorbed from the surfaces after annealing the substrates, which indicates that they are suitable for fixing molecules onto the surface. Then, we fixed MWNTs which were dispersed in hexane and pulse-injected onto the H-terminated surface. An isolated MWNT was observed by STM and was investigated by scanning tunneling spectroscopy (STS). The STS spectra revealed a metallic feature of the particular MWNT.

show abstract

Section: Introductionmentioning

confidence: 99%

A Complementary Metal–Oxide–Semiconductor Image Sensor with 2.0 e^- Random Noise and 110 ke^- Full Well Capacity and Noise Measurement of Pixel Transistors Using Column Source Follower Readout Circuits

Kohara

Lee

Mizobuchi

et al. 2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors

Kuroda

Teramoto

Sugawa

2016

2016 International Conference on Microelectronic Test Structures (ICMTS)

View full text Add to dashboard Cite

Using the developed array test circuit, both static and temporal electrical characteristics of over million transistors/shot were measured with the accuracy of 60 ~Vrms to analyze and reduce random telegraph noise (RTN) toward high SIN CMOS image sensors. Statistical evaluation results of RTN parameters such as time constants and amplitude and their behaviors toward transistor device structures and operation conditions are summarized. Application to high SIN CMOS image sensor is also described.

show abstract

Random Telegraph Signal and Flicker Noise In CMOS Image Sensor using Column Source Follower Readout Circuits

Cited by 2 publications

References 1 publication

A Complementary Metal–Oxide–Semiconductor Image Sensor with 2.0 e^- Random Noise and 110 ke^- Full Well Capacity and Noise Measurement of Pixel Transistors Using Column Source Follower Readout Circuits

A Complementary Metal–Oxide–Semiconductor Image Sensor with 2.0 e^- Random Noise and 110 ke^- Full Well Capacity and Noise Measurement of Pixel Transistors Using Column Source Follower Readout Circuits

Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors

Contact Info

Product

Resources

About

Random Telegraph Signal and Flicker Noise In CMOS Image Sensor using Column Source Follower Readout Circuits

Cited by 2 publications

References 1 publication

A Complementary Metal–Oxide–Semiconductor Image Sensor with 2.0 e- Random Noise and 110 ke- Full Well Capacity and Noise Measurement of Pixel Transistors Using Column Source Follower Readout Circuits

A Complementary Metal–Oxide–Semiconductor Image Sensor with 2.0 e- Random Noise and 110 ke- Full Well Capacity and Noise Measurement of Pixel Transistors Using Column Source Follower Readout Circuits

Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors

Contact Info

Product

Resources

About

A Complementary Metal–Oxide–Semiconductor Image Sensor with 2.0 e^- Random Noise and 110 ke^- Full Well Capacity and Noise Measurement of Pixel Transistors Using Column Source Follower Readout Circuits

A Complementary Metal–Oxide–Semiconductor Image Sensor with 2.0 e^- Random Noise and 110 ke^- Full Well Capacity and Noise Measurement of Pixel Transistors Using Column Source Follower Readout Circuits