Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors

Kuroda, Rihito; Teramoto, Akinobu; Sugawa, Shigetoshi

doi:10.1109/icmts.2016.7476172

Cited by 15 publications

(4 citation statements)

References 35 publications

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“…Figure 3 shows a circuit schematic diagram of the newly developed platform. The platform employs architectures of an array test circuit [45][46][47][48][49][50] to achieve a high-speed measurement with a large number of DUTs. The arrayed DUTs are selected by vertical and horizontal shift resisters (VSR and HSR).…”

Section: Experimental Methodsmentioning

confidence: 99%

A high-precision 1 Ω–10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials

Maeda¹,

Omura²,

Kuroda³

et al. 2020

Jpn. J. Appl. Phys.

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We developed an accuracy improved resistance measurement platform for statistical evaluation of emerging memory materials. The developed platform excludes on-resistance of selectors (R ON ), resulting in high measurement accuracy with a measurement error of 10% or less across the measurement range of 1 Ω-10 MΩ. The developed platform can accurately measure the resistance of various memory materials on a large scale of 360 000 cells within 50 ms. Various memory materials can be tested only by forming them on top of the platform. The circuit operation was verified, and the effect of R ON exclusion was confirmed using 6000 Poly-Si cells.

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Section: Experimental Methodsmentioning

confidence: 99%

A high-precision 1 Ω–10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials

Maeda¹,

Omura²,

Kuroda³

et al. 2020

Jpn. J. Appl. Phys.

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“…To fully understand the RTN, it is necessary to characterize the statistical distributions, emission-capture time constants, activation energies, noise power spectra densities, physical locations, and the relations to detailed fabrication processes. In spite of being studied in the past several decades [ 20 , 21 , 22 , 23 , 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 ], many RTN-related issues still remain as active research topics due to the nature of its complexity.…”

Section: Introductionmentioning

confidence: 99%

Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method

Chao

et al. 2017

Sensors

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A study of the random telegraph noise (RTN) of a 1.1 μm pitch, 8.3 Mpixel CMOS image sensor (CIS) fabricated in a 45 nm backside-illumination (BSI) technology is presented in this paper. A noise decomposition scheme is used to pinpoint the noise source. The long tail of the random noise (RN) distribution is directly linked to the RTN from the pixel source follower (SF). The full 8.3 Mpixels are classified into four categories according to the observed RTN histogram peaks. A theoretical formula describing the RTN as a function of the time difference between the two phases of the correlated double sampling (CDS) is derived and validated by measured data. An on-chip time constant extraction method is developed and applied to the RTN analysis. The effects of readout circuit bandwidth on the settling ratios of the RTN histograms are investigated and successfully accounted for in a simulation using a RTN behavior model.

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“…In this sensor, random telegraph noise (RTN) occurred on the source follower in the pixel because of the shrinkage of the MOSFET used in the source follower. [20][21][22][23][24][25] RTN generated noise after offset subtraction, as shown in Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Suppression method of low-frequency noise for two-dimensional integrated magnetic sensor

Kimura

Sakairi

Mori

et al. 2017

Jpn. J. Appl. Phys.

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A new correlated double sampling method for two-dimensional magnetic sensors was proposed. In this method, output from a magnetic sensor is controlled by adjusting the drain bias of a MOSFET used as a Hall element. The two-dimensional integrated magnetic sensor used for the demonstration of correlated double sampling was composed of a 64 × 64 array of Hall sensors and fabricated by a 0.18 µm CMOS standard process. The size of a Hall element was 2.7 × 2.7 µm2. The dimensions of one pixel in which a Hall element was embedded were 7 × 7 µm2. The magnitude of residual noise after correlated double sampling with drain bias control was 0.81 mVp–p. This value is 16% of the original low-frequency noise. From the experimental results, the proposed correlated double sampling method is found to be suitable for low-frequency noise suppression in the two-dimensional magnetic sensors.

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Random telegraph noise measurement and analysis based on arrayed test circuit toward high S/N CMOS image sensors

Cited by 15 publications

References 35 publications

A high-precision 1 Ω–10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials

A high-precision 1 Ω–10 MΩ range resistance measurement platform for statistical evaluation of emerging memory materials

Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method

Suppression method of low-frequency noise for two-dimensional integrated magnetic sensor

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