Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs

Dai, Lulu; Lü, Weifeng; Lin, Mi

doi:10.3390/electronics8030282

Cited by 5 publications

(3 citation statements)

References 25 publications

(30 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…where N s v − → ρ is one doping profile randomization with the sample index ν for the doping species s. The green's function G s c (⃗ ρ) is called an impedance field, and it does not depend on the randomization of the doping profile. RDF can significantly affect the reliability and aging of the device [38][39][40]. The impact of varying RDF for the 50 samples with different gas pressures on I DS -V GS curves, V TH , normal quantile of V TH deviation, and standard deviation of the V TH with varying RDF are shown in figure 10.…”

Section: Effect Of the Rdfmentioning

confidence: 99%

A proof of concept for reliability aware analysis of junctionless negative capacitance FinFET-based hydrogen sensor

Gandhi,

Jaisawal,

Rathore

et al. 2024

Smart Mater. Struct.

View full text Add to dashboard Cite

This work demonstrates the reliability-aware analysis of the Junctionless Negative Capacitance (NC) FinFET employed as a hydrogen (H2) gas sensor. Gate stacking of the ferroelectric (FE) layer induces internal voltage amplification owing to the NC property, thus, improving the sensitivity of the baseline Junctionless FinFET. A well-calibrated TCAD model is used to investigate the sensing characteristics of the proposed FinFET-based H2 sensor by employing the Palladium (Pd) metallic gate as a sensing element. The mechanism involves the transduction of H2 gas molecules over the metal gate; due to the diffusion process, some atomic hydrogen diffuses into the metal. The H2 gas absorption at the metal surface causes a dipole layer formation at the gate and oxide interface, which changes the metal gate work function. As a result, this change in the work function can be used as a sensing parameter of the proposed gas sensor. Further, the threshold voltage and other electrical characteristics, such as output conductance, transconductance, and drain current are examined for sensitivity analysis for both NC and without NC JL FinFET at different pressure ranges, keeping the temperature constant (i.e., 300K). The device variation, i.e., Fin thickness, Fin height, doping and thickness of HfO2 ferroelectric layer, etc., on sensor sensitivity has been evaluated through extensive simulation. This paper also presents a detailed investigation of the sensor's reliability in terms of work function variation, random dopant fluctuation, trap charges, and device aging, i.e., end of a lifetime (EOL). At last, the acquired results are compared with earlier reported data, which justifies the profound significance of the proposed Junctionless Negative Capacitance (JLNC) FinFET-based H2 gas sensor.

show abstract

Section: Effect Of the Rdfmentioning

confidence: 99%

A proof of concept for reliability aware analysis of junctionless negative capacitance FinFET-based hydrogen sensor

Gandhi,

Jaisawal,

Rathore

et al. 2024

Smart Mater. Struct.

View full text Add to dashboard Cite

show abstract

“…Since FinFET devices are not doped, the current density is very high at the channel-gate-oxide interface which causes acceleration of the charge carrier to interface into the gate oxide from the channel and it further increases with the stress [3]. Junctionless-FinFET also has a potential to replace the conventional MOSFET but it also has a problem of BTI and process variation [4]. Hence, it is a primary need to design a robust SRAM memory.…”

Section: Introductionmentioning

confidence: 99%

A Reactive and On-Chip Sensor Circuit for NBTI and PBTI Resilient SRAM Design

Yadav¹,

Kim²,

Alashi³

et al. 2020

Electronics

View full text Add to dashboard Cite

Process Variation (PV), Bias Temperature Instability (BTI) and Time-Dependent Dielectric Breakdown (TDDB) are the critical factors that affect the reliability of semiconductor chip design. They cause the system to be unstable and increase the soft error rate. In this paper, a compact on-chip degradation technique using runtime leakage current monitoring has been proposed. The proposed sensor-based adaptive technique compensates for the variation due to PV and aging using the body-bias-voltage-generator circuit. Simulation experiments for three and ten-year stress have been performed. Simulation results proved the superiority of the proposed sensor which provides 33% (up to 0.75 V) more output voltage and 98% sensitivity at 1 V supply voltage compared to the state-of-the-art sensor. The proposed technique mitigates up to 80% PV and BTI effects in SRAM compared to the state-of-the-art techniques.

show abstract

“…These variation sources result in statistical variability of device electrical characteristics and, consequently, inverter delay, which is the main figure‐of‐merit in digital IC design. Although random dopant fluctuation (RDF) induced variability has been comprehensively discussed [24], there is still a lack of research on RDF‐induced variations in the timing characteristics of a CMOS inverter when the FE negative capacitor is connected. Furthermore, the electrical characteristics of an inverter chain and complicated circuits are seldom reported to comprehensively evaluate low‐power consumption characteristics in NCFET.…”

Section: Introductionmentioning

confidence: 99%

Performance improvement of timing and power variations due to random dopant fluctuation in negative‐capacitance CMOS inverters

Zhang

Lü

et al. 2020

IET Circuits, Devices & Systems

Self Cite

View full text Add to dashboard Cite

Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs

Cited by 5 publications

References 25 publications

A proof of concept for reliability aware analysis of junctionless negative capacitance FinFET-based hydrogen sensor

A proof of concept for reliability aware analysis of junctionless negative capacitance FinFET-based hydrogen sensor

A Reactive and On-Chip Sensor Circuit for NBTI and PBTI Resilient SRAM Design

Performance improvement of timing and power variations due to random dopant fluctuation in negative‐capacitance CMOS inverters

Contact Info

Product

Resources

About