Raman study of Ni and Ni silicide contacts on 4H– and 6H–SiC

Effect of annealing temperature on the contact properties of Ni/V/4H-SiC structure

“…3(b) shows the Raman spectra of sample AN650, AN750, AN850, AN950 and AN1050. The Raman peaks of 4H-SiC and Ni 2 Si are marked by rhombus (᭜) and dots (•), respectively, which is consistent with what Siad et al 18 and Cichoň et al 20 have reported. It is obvious that some new Raman peaks appear when the annealing temperature exceeds 950 • C. The new peaks correspond to Ni 2 Si and SiC.…”

“…It is obvious that some new Raman peaks appear when the annealing temperature exceeds 950 • C. The new peaks correspond to Ni 2 Si and SiC. 20 It is noteworthy that no VC x peak could be observed, probably due to the detection limit of Raman microscope.…”

Evaluation of crack resistance of CrSiCN coatings as a function of Si concentration via nanoindentation

“…4, higher increasing rate of C in CrSiCN (25) and CrSiCN(30) makes it rich enough to form amorphous carbon, so that D and G peaks display again in Raman spectra. Moreover, the broad peaks of a-SiC x at 521 cm −1 and a-SiN x at 1052 cm −1 still exist [38,39]. Thus, taking XRD and Raman spectra into account, it is confirmed that Si exists in CrSiCN coatings in the forms of a-SiC x or aSiN x , and the content of a-SiC x or a-SiN x increases gradually as a function of Si concentration.…”

A Wafer-Scale Ni-Salicide Contact Technology on n-Type 4H-SiC

“…[16][17][18][19][20] The silicide formation starts at 550 • C and its phase transformation continues at higher temperatures. The intensity of the Ni 2 Si peak is dramatically increased at above 700…”

“…[11][12][13][14][15] Nickel (Ni) silicide is shown to be a good choice for the n-type ohmic contacts. [16][17][18][19][20][21] For SiC, Ni 2 Si is rectifying until annealed at 950…”