Raman Studies of InGaAlAs Digital Alloys

Min, Kyoung-In; Rho, Heesuk; Song, Jing Dong; Choi, Won Jun; Lee, Yong Tak

doi:10.3938/jkps.59.2801

Cited by 3 publications

(4 citation statements)

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“…The AlAs-like modes here are LO phonon modes, corresponding to the relative vibrations between the Al and As atoms, which vibrate in the direction of phonon propagation. In samples A and B, the Raman peaks located at about 360 cm −1 (labeled as "5" and "g") are attributed to AlAs-like modes, in agreement with those reported in the literature [38,42]. The Raman results for samples A and B reveal that the (InAs) 4 (GaAs) 3 /InAlAs MQWs grown using the MEE mode exhibit excellent periodicity.…”

Section: Raman Measurements Of Low-temperature-grown (Inas)4(gaas)3/i...supporting

confidence: 87%

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Liu,

Chen,

Kong

et al. 2024

Materials

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The growth of InGaAs quantum wells (QWs) epitaxially on InP substrates is of great interest due to their wide application in optoelectronic devices. However, conventional molecular beam epitaxy requires substrate temperatures between 400 and 500 °C, which can lead to disorder scattering, dopant diffusion, and interface roughening, adversely affecting device performance. Lower growth temperatures enable the fabrication of high-speed optoelectronic devices by increasing arsenic antisite defects and reducing carrier lifetimes. This work investigates the low-temperature epitaxial growth of InAs/GaAs short-period superlattices as an ordered replacement for InGaAs quantum wells, using migration-enhanced epitaxy (MEE) with low growth temperatures down to 200–250 °C. The InAs/GaAs multi-quantum wells with InAlAs barriers using MEE grown at 230 °C show good single crystals with sharp interfaces, without mismatch dislocations found. The Raman results reveal that the MEE mode enables the growth of (InAs)4(GaAs)3/InAlAs QWs with excellent periodicity, effectively reducing alloy scattering. The room temperature (RT) photoluminescence (PL) measurement shows the strong PL responses with narrow peaks, revealing the good quality of the MEE-grown QWs. The RT electron mobility of the sample grown in low-temperature MEE mode is as high as 2100 cm2/V*s. In addition, the photoexcited band-edge carrier lifetime was about 3.3 ps at RT. The high-quality superlattices obtained confirm MEE’s effectiveness for enabling advanced III-V device structures at reduced temperatures. This promises improved performance for applications in areas such as high-speed transistors, terahertz imaging, and optical communications.

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Section: Raman Measurements Of Low-temperature-grown (Inas)4(gaas)3/i...supporting

confidence: 87%

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Liu,

Chen,

Kong

et al. 2024

Materials

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“…b and are undoubtedly related to the InP layers. The band 3 is assigned to AlAs ‐like mode of InAlAs barrier (phonon frequency 367 cm −1 coincides with the literature value) …”

Section: Introductionsupporting

confidence: 86%

“…InAs ‐like TO (226 cm −1 —line 9) and LO InAs ‐like: 231 cm −1 —line 8 (it is possible to expect that really that is combination of four modes: two TO InAs ‐like ones at 224 cm −1 and 226 and two LO InAs ‐like ones at 231 cm −1 and 233 cm −1 belonging to QW In 0,65 Ga 0,35 As and to barrier In 0,52 Al 0,48 As, respectively) which are resolved clearly. Nevertheless, following the observed broad band could be interpreted as a combination not only three but several Lorentzian bands, i.e. despite InAs ‐like TO and InAs ‐like LO , the GaAs ‐like TO (255 cm −1 —line 6) and GaAs‐ like LO (268 cm −1 —line 5) modes are contributed to this band, too.…”

Section: Introductionmentioning

confidence: 91%

“…The band 3 is assigned to AlAs-like mode of InAlAs barrier (phonon frequency 367 cm À1 coincides with the literature value). [12] The broad band centered approximately at 228 cm À1 is at least a combination of two peaks, i.e. InAs-like TO (226 cm À1 -line 9) and LO InAs-like: 231 cm À1 -line 8 (it is possible to expect that really that is combination of four modes: two TO InAs-like ones at 224 cm À1 and 226 and two LO InAs-like ones at 231 cm À1 and 233 cm À1 belonging to QW In 0,65 Ga 0,35 As and to barrier In 0,52 Al 0,48 As, respectively) which are resolved clearly.…”

Section: Description Of Dqwsmentioning

confidence: 99%

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Interface quality and interface modes in the double quantum wells structure

Sheregii

Płoch

Płociński

et al. 2016

Surface & Interface Analysis

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The results of investigations of the double quantum well structure (DQWs) of special engineering are reported. The scanning transmission electron microscopy (STEM) observations confirmed a high quality of interfaces and smooth change of the In‐content in a rectangular shape QW. Micro‐Raman experiment enabled to detect interface phonons in DQWs which are manifested in magnetophonon resonance. This contribution of interface phonons in the electron magneto‐transport is important because as could be expected, the role of these phonons will increase in case of electron transport in the double quantum wires fabricated from DQWs investigated. Copyright © 2016 John Wiley & Sons, Ltd.

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Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs)4(GaAs)3/Be-Doped InAlAs Quantum Wells for THz Applications

Liu,

Deng,

Liu

et al. 2024

Crystals

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This investigation explores the structural and electronic properties of low-temperature-grown (InAs)4(GaAs)3/Be-doped InAlAs and InGaAs/Be-doped InAlAs multiple quantum wells (MQWs), utilizing migration-enhanced epitaxy (MEE) and conventional molecular beam epitaxy (MBE) growth mode. Through comprehensive characterization methods including transmission electron microscopy (TEM), Raman spectroscopy, atomic force microscopy (AFM), pump–probe transient reflectivity, and Hall effect measurements, the study reveals significant distinctions between the two types of MQWs. The (InAs)4(GaAs)3/Be-doped InAlAs MQWs grown via the MEE mode exhibit enhanced periodicity and interface quality over the InGaAs/Be-InAlAs MQWs grown through the conventional molecule beam epitaxy (MBE) mode, as evidenced by TEM. The AFM results indicate lower surface roughness for the (InAs)4(GaAs)3/Be-doped InAlAs MQWs by using the MEE mode. Raman spectroscopy reveals weaker disorder-activated modes in the (InAs)4(GaAs)3/Be-doped InAlAs MQWs by using the MEE mode. This originates from utilizing the (InAs)4(GaAs)3 short period superlattices rather than InGaAs, which suppresses the arbitrary distribution of Ga and In atoms during the InGaAs growth. Furthermore, pump–probe transient reflectivity measurements show shorter carrier lifetimes in the (InAs)4(GaAs)3/Be-doped InAlAs MQWs, attributed to a higher density of antisite defects. It is noteworthy that room temperature Hall measurements imply that the mobility of (InAs)4(GaAs)3/Be-doped InAlAs MQWs grown at a low temperature of 250 °C via the MEE mode is superior to that of InGaAs/Be-doped InAlAs MQWs grown in the conventional MBE growth mode, reaching 2230 cm2/V.s. The reason for the higher mobility of (InAs)4(GaAs)3/Be-doped InAlAs MQWs is that this short-period superlattice structure can effectively suppress alloy scattering caused by the arbitrary distribution of In and Ga atoms during the growth process of the InGaAs ternary alloy. These results exhibit the promise of the MEE growth approach for growing high-performance MQWs for advanced optoelectronic applications, notably for high-speed optoelectronic devices like THz photoconductive antennas.

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Raman Studies of InGaAlAs Digital Alloys

Cited by 3 publications

References 0 publications

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

Interface quality and interface modes in the double quantum wells structure

Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs)4(GaAs)3/Be-Doped InAlAs Quantum Wells for THz Applications

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