Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs)4(GaAs)3/Be-Doped InAlAs Quantum Wells for THz Applications
Linsheng Liu,
Zhen Deng,
Guipeng Liu
et al.
Abstract:This investigation explores the structural and electronic properties of low-temperature-grown (InAs)4(GaAs)3/Be-doped InAlAs and InGaAs/Be-doped InAlAs multiple quantum wells (MQWs), utilizing migration-enhanced epitaxy (MEE) and conventional molecular beam epitaxy (MBE) growth mode. Through comprehensive characterization methods including transmission electron microscopy (TEM), Raman spectroscopy, atomic force microscopy (AFM), pump–probe transient reflectivity, and Hall effect measurements, the study reveals… Show more
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