Raman scattering in InAs1−xSbx grown by organometallic vapor phase epitaxy

Abstract

The first investigation of the lattice dynamics of the ternary alloy InAs1−xSbx has been made using Raman scattering. The InAs1−xSbx epilayers were grown by organometallic vapor phase epitaxy on (100) InAs and InSb substrates over the entire composition range. The spectra in the optical phonon frequency range show only one set of longitudinal- and transverse-optical (LO,TO) modes, which vary continuously with composition for x≤0.6, and two sets of LO modes for x>0.6. Both disorder-activated acoustic and optical phonon modes also appear.

Modified LPE technique growth and properties of long wavelength InAs0.05Sb0.95 thick film

“…The optical phonons of ternary compound InAs x Sb 1−x show a one + two-mode behavior, similar to the GaInAs and GaInSb systems [20]. InAs 1−x Sb x alloy shows a one-mode behavior for the optical phonons in the composition range 0 < x < 0.6 and two-mode behavior for large value of x (x > 0.6) [21]. The lattice dynamics study by Raman scattering suggests two-mode behavior of the optical phonons for InAs 0.05 Sb 0.95 crystal grown by modified LPE techniques.…”

“…InSb and InAsSb have been amply probed by Raman methods [17][18][19][20][21]. Here we show the Raman scattering data of InAs 0.05 Sb 0.95 film with high Sb composition and with thickness up to 120 m. Fig.…”

Effect of buffer layer thickness and epilayer growth temperature on crystalline quality of InAs0.9Sb0.1 grown by MOCVD

“…For sample A4, a broadband with Raman shift 136 cm −1 is observed. A similar broadband which exists between 130 and 150 cm −1 has been reported by Cherng [16]. This band was identified as been due to disorder-activated longitudinal acoustic (DALA) phonons [16].…”

“…A similar broadband which exists between 130 and 150 cm −1 has been reported by Cherng [16]. This band was identified as been due to disorder-activated longitudinal acoustic (DALA) phonons [16]. Raman scattering is determined by the overlap integral of electrons, phonons and photons, the finite phonon mode will lead to the broadening and asymmetry of the Raman scattering line shape [18].…”

“…A shoulder lies between the InAs-like LO mode and the InSb-like LO mode for all the samples. This shoulder has been observed by Li [15] and Cherng [16] for InAsSb, by Kakimoto [17] for InGaAs, and was interpreted as being due to disorder-activated optical (DAO) phonons. For sample A4, a broadband with Raman shift 136 cm −1 is observed.…”