Raman monitoring of semiconductor growth

Wagner, Veit; Drews, D.; Esser, N.; Zahn, Dietrich R. T.; Geurts, J.; Richter, Wolfgang

doi:10.1063/1.356644

Cited by 57 publications

(22 citation statements)

References 11 publications

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“…13,21,22 The Stokes peak is more intensive than the anti-Stokes peak, which is typical under thermal equilibrium state. 23,24 In addition, the shoulder peaks emerging at 190 cm À1 and À190 cm À1 correspond to longitudinaloptical (LO) phonon mode. There is no significant Raman shift in the nanowire observed; however, the asymmetric broadening towards the low-frequency side is attributed to the strong phonon confinement effect in InSb nanowire structure.…”

mentioning

confidence: 99%

Field effect transistor based on single crystalline InSb nanowire

et al. 2011

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mentioning

confidence: 99%

Field effect transistor based on single crystalline InSb nanowire

et al. 2011

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“…Inelastically scattered light from the sample surface was collected through the central viewport of the UHV chamber allowing Raman spectra to be taken simultaneously to the deposition process. Details on this setup can be found elsewhere [13]. The 514.5 nm (for C 60 ) and 488 nm (for PTCDA) emission lines of an Ar + ion laser were used for excitation.…”

Section: Methodsmentioning

confidence: 99%

Raman Studies of Molecular Thin Films

Zahn

2001

phys. stat. sol. (a)

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ylene tetracarboxylic dianhydride (PTCDA) fabricated by Organic Molecular Beam Deposition (OMBD) under ultra-high vacuum conditions. C 60 was evaporated onto Si(100) surfaces at room temperature and the deposition process was monitored in situ by Raman spectroscopy in the spectral region 1350-1600 cm --1 , where the most intense Raman features of C 60 are observed. Changes observed in the initial stage of deposition indicate that laser induced photopolymerisation of C 60 is inhibited until approximately 15 nm film thickness. PTCDA films were also grown by OMBD on Si(100) substrates at different growth temperatures in the range between 230 and 470 K. The Raman spectra exhibit four features assigned to external vibrational modes, that occur as a consequence of the arrangement of the PTCDA molecules in a crystalline environment. The full width at half maximum of these phonon lines decreases with increasing substrate temperature. A similar tendency is also observed for the Raman-active internal molecular modes. The observed spectral changes are related to an increase in the size of the crystalline domains within the films.

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“…80 The ability to monitor epitaxial growth in situ has already been demonstrated by a number of workers. Wagner et al 81 showed how growth of InSb on Sb(111) could be measured at room temperature. Film growth was monitored between 0 and 40 nm, and it was possible to model the intensity variation to measure the film thickness (not a trivial matter because interference in the film imposes a cyclic intensity variation as a function of thickness).…”

Section: Semiconductors and Carbonmentioning

confidence: 99%

Process Measurements by Raman Spectroscopy

Everall

Clegg²,

King³

2001

Handbook of Vibrational Spectroscopy

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Raman spectroscopy has long been recognized as a powerful analytical tool, capable of characterizing a wide range of materials, but for many years the size and complexity of instrumentation confined it to the research laboratory, making process analysis impractical. However, compact, sensitive and robust Raman instruments are now available that can be readily interfaced to production processes. This article attempts to illustrate the general capabilities of Raman spectroscopy as a process analytical tool. We first consider the instrumental and engineering aspects of making Raman measurements under production conditions, and then discuss some of the areas in which it has been fruitfully employed. The application examples discussed were chosen to cover the main range of sample types that one might encounter in the industry. We also describe some common artifacts and problems, which can arise and confuse the new practitioner.

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Raman monitoring of semiconductor growth

Abstract: A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with subsecond time resolution Rev.

Cited by 57 publications

References 11 publications

Field effect transistor based on single crystalline InSb nanowire

Field effect transistor based on single crystalline InSb nanowire

Raman Studies of Molecular Thin Films

Process Measurements by Raman Spectroscopy

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