CdTe epitaxial layers were deposited on clean cleaved InSb(110) substrates by molecular-beam epitaxy at room temperature and elevated temperatures. The formation of interface and layer was investigated using Raman spectroscopy as a growth monitor, i.e., Raman spectra were taken on line without interruption of the deposition process. Fabry–Pérot interference of the incident as well as the scattered light within the heterostructure leads to a characteristic modulation of the substrate phonon scattering intensity. The modulation is calculated and serves as a measure for the layer thickness. For the deposition at elevated temperatures the true surface temperature is determined from the InSb TO phonon frequency shift. While at a substrate temperature of 150 °C the crystalline quality of the CdTe layer was improved compared to room-temperature growth, the deposition of CdTe at 300 °C resulted in the formation of a layer consisting of In2Te3 and liberated Sb. The effect of the laser radiation on the growth process at different temperatures is also discussed.

A rapid reflectance-difference spectrometer for real-time semiconductor growth monitoring with subsecond time resolution Rev.

A novel concept for the fabrication of nanostructured probe tips for application in scanning near-field optical microscopy (SNOM) based on micromachining and thin-film technology is presented. This concept allows for the reproducible batch fabrication of aperture probe tips consisting of a transparent silicon nitride cone with a sharp tip apex surrounded by a metallic coating. Furthermore, the concept can be extended to the fabrication of probe tips with a coaxial nanostructure or a single nanoelectrode. The tip fabrication can be integrated into micromachining processes for the batch fabrication of scanning probe microscopy sensors and therefore leads to new types of multifunctional probes. Here the integration of the SNOM probe tip into an AFM cantilever equipped with an integrated optical waveguide designed for simultaneous AFM/SNOM operation is described.

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